Integrated ultraviolet sensor system with on-chip 1 GΩ transimpedance amplifier

Bolliger, Daniel; Malcovati, P.; Hàberli, A.; Baltes, H.; Sarro, P.M.; Maloberti, F.

doi:10.1109/isscc.1996.488639

Cited by 6 publications

(2 citation statements)

References 4 publications

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“…An attempt was made to extend the specialized sensor process (Popovic, 1993;Popovic et al, 1990) to allow the fabrication of the electronics with the sensor device on the same chip (Bolliger et al, 1995(Bolliger et al, , 1996.…”

Section: Introductionmentioning

confidence: 99%

Integrated microsystem for blue/ultraviolet detection

Pauchard

Furrer²,

Randjelović³

et al. 2000

Sensor Review

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A fully integrated sensor microsystem for blue/ultraviolet radiation detection is presented. The photosensitive part combines a blue/UV selective stripe‐shaped photodiode with a small compensation infrared photodiode. A transimpedance amplifier with 1 GΩ feedback resistor is integrated on the same silicon chip. The main features of the op amp are a low offset (<0.5mV) and fail‐safe operation. This sensor has a maximal responsivity of 150 mV/nW at λ = 420 nm, corresponding to 43 percent quantum efficiency. A ratio of the responsivities at 420 nm and 1 μm as large as 560 is achieved. The system has a noise equivalent power of 5 10‐13 W. The 2.2 mm2 microsystem is realized in a standard CMOS 0.5 μm process.

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Section: Introductionmentioning

confidence: 99%

Integrated microsystem for blue/ultraviolet detection

Pauchard

Furrer²,

Randjelović³

et al. 2000

Sensor Review

View full text Add to dashboard Cite

show abstract

“…As examples, we can consider the charge amplifier reported by Simoni et al [58] and the current amplifier implemented in bipolar technology discussed by Bolliger et al [59] The most important features of these two circuits are reported in Tables 17.8 and 17.9, respectively.…”

Section: Current or Charge Outputmentioning

confidence: 99%