Integrated ultra-high-performance graphene optical modulator

Heidari, Elham; Dalir, Hamed; Koushyar, Farzad Mokhtari; Nouri, Behrouz Movahhed; Patil, Chandraman; Miscuglio, Mario; Akinwande, Deji; Sorger, Volker J.

doi:10.1515/nanoph-2021-0797

Cited by 34 publications

(15 citation statements)

References 19 publications

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“…Such compact design gives the capability for increase the on-chip integration density more than 10 times compared to traditional photodetectors, which is important for on-chip computing, machine learning or neuromorphic applications. [86][87][88][89][90][91][92][93] Figure 2. a. Mode modelling of alternative structures with 2D materials that developed on top of the waveguide demonstrates that the proposed slot has a 15 times higher overlap factor when compared to the others.…”

Section: Resultsmentioning

confidence: 99%

30 GHz plasmonic slot MoTe2 photodetector integrated with silicon photonic circuits at telecom wavelength

Wang¹,

Nouri

Dalir

et al. 2023

Ultrafast Phenomena and Nanophotonics XXVII

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An experimental demonstration of a waveguide-integrated plasmonic slot photodetector based on MoTe2 with 30 GHz 3 dB roll-off bandwidth at telecom wavelength. To overcome the intrinsic low carrier mobility and weak light-matter interaction when applying two-dimensional material for optoelectronic devices, here we numerically and experimentally show a novel concept of the plasmonic slot structure to eliminate the transit time constant (τ=L^2/μV) from the device which is related to the material mobility. The nanometer-wide plasmonic slot offers a 'squeezed' mode that allows the 2d material can effectively absorb the light via band-to-band transitions with an overlap factor (Г) increasing more than 3 times compared to the bare waveguide structure. The ultra-narrow slot width reduces the carriers' drift route to tens of nanometers and is only limited by the RC time constant. The MoTe2 serves as the semiconducting light-absorbing material with its layer-dependent bandgap that encompasses the standard O-band wavelength for communications (1,260 nm -1 ,360 nm). The device's static performance under 1 V bias voltage also shows a high photoresponsivity of 0.8 A/W at 1310 nm with a low dark current of 90 nA. Furthermore, we study the slot width-dependent frequency response and static response to validate our concept, which shows that both the frequency and static response are inversely proportional to the slot width. The concept is not restricted to materials and the platform. This may pave the way for developing high-performance optoelectronic devices with materials that have unique optical and electric properties but suffer from low mobilities. [1][2][3][4][5][6][7][8][9][10][11][12][13] It has been shown that introducing plasmonic structures, cavities, resonators, or nanoparticles into waveguide-loaded systems can improve light-matter interactions. [14][15][16][17] Still, one of their biggest challenges today is the frequency response of TMDCbased devices for telecommunications or information processing. [18][19][20][21][22][23][24][25][26][27][28][29][30] For photodetectors using TMDCs as the lightabsorbing medium, this is particularly crucial.

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Section: Resultsmentioning

confidence: 99%

30 GHz plasmonic slot MoTe2 photodetector integrated with silicon photonic circuits at telecom wavelength

Wang¹,

Nouri

Dalir

et al. 2023

Ultrafast Phenomena and Nanophotonics XXVII

Self Cite

View full text Add to dashboard Cite

show abstract

“…Discrepancies in thermal expansion coefficients, lattice constants, and chemical reactivity among different materials may induce structural defects and impair performance [161]. Achieving high-quality interfaces between different materials is crucial for efficient charge and energy transfer in BNT implementations [162]. Fabrication processes must be carefully designed and optimized to ensure that the integration of disparate materials does not compromise the unique properties of GRMs or other materials involved, that are core to the functionality of IoBNT.…”

Section: Discussion On Materials Challengesmentioning

confidence: 99%

Universal Transceivers: Opportunities and Future Directions for the Internet of Everything (IoE)

et al. 2021

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The Internet of Everything (IoE) is a recently introduced information and communication technology (ICT) framework promising for extending the human connectivity to the entire universe, which itself can be regarded as a natural IoE, an interconnected network of everything we perceive. The countless number of opportunities that can be enabled by IoE through a blend of heterogeneous ICT technologies across different scales and environments and a seamless interface with the natural IoE impose several fundamental challenges, such as interoperability, ubiquitous connectivity, energy efficiency, and miniaturization. The key to address these challenges is to advance our communication technology to match the multi-scale, multi-modal, and dynamic features of the natural IoE. To this end, we introduce a new communication device concept, namely the universal IoE transceiver, that encompasses transceiver architectures that are characterized by multi-modality in communication (with modalities such as molecular, RF/THz, optical and acoustic) and in energy harvesting (with modalities such as mechanical, solar, biochemical), modularity, tunability, and scalability. Focusing on these fundamental traits, we provide an overview of the opportunities that can be opened up by micro/nanoscale universal transceiver architectures towards realizing the IoE applications. We also discuss the most pressing challenges in implementing such transceivers and briefly review the open research directions. Our discussion is particularly focused on the opportunities and challenges pertaining to the IoE physical layer, which can enable the efficient and effective design of higher-level techniques. We believe that such universal transceivers can pave the way for seamless connection and communication with the universe at a deeper level and pioneer the construction of the forthcoming IoE landscape.Index Terms– Internet of Everything, Universal IoE Transceiver, Interoperability, Multi-modality, Hybrid Energy Harvesting, Molecular Communications, THz Communications, Graphene and related nanomaterials.

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“…To effectively decrease power consumption, one could reduce the electrical capacitance by shrinking the device size. In 2022, Heidari et al [52] demonstrated an ultra-low power graphene-based optical modulator by using a Bragg reflector waveguide. In that device, a Bragg reflector waveguide is laterally merged with a silicon waveguide.…”

Section: Resonator-coupled Optical Modulatorsmentioning

confidence: 99%

Recent progress in graphene-based optical modulators on silicon photonics platform

Qiu¹,

Zeng²,

Su³

2022

NSO

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Graphene is a 2D material which has attracted tremendous interest from academia and industry, due to its attractive electrical and optical properties. By integrating graphene onto silicon photonics platform, various high-performance electrooptic and thermo-optic modulators have been demonstrated. In this paper, such graphene-based optical modulators are reviewed. The concept and principle of optical modulations are firstly analyzed and then an overview of the developing trends of optical modulators is presented. Meanwhile, the performances of graphene-based optical modulators, including power consumptions and speeds of electro-optic modulators as well as tuning efficiencies of thermo-optic modulators, are then evaluated and discussed in detail. All these optical modulators would play important roles in a wide range of applications including telecom, interconnects, computing, quantum information processing, and beam steering.

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Integrated ultra-high-performance graphene optical modulator

Cited by 34 publications

References 19 publications

30 GHz plasmonic slot MoTe2 photodetector integrated with silicon photonic circuits at telecom wavelength

30 GHz plasmonic slot MoTe2 photodetector integrated with silicon photonic circuits at telecom wavelength

Universal Transceivers: Opportunities and Future Directions for the Internet of Everything (IoE)

Recent progress in graphene-based optical modulators on silicon photonics platform

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