Integrated packaging of over 100 GHz bandwidth uni-traveling-carrier photodiodes

Abstract

Hybrid packaging techniques, in which the device substrate is different from the package substrate, and wire bonding or solder interconnections are used, are inadequate for ultrahigh-speed ( 100 GHz) wideband applications. By employing wafer-bonding techniques, integrated packaging (IP) technology was developed, in which devices are fabricated directly on the package substrate, and the interconnections are made as a part of the device fabrication process. This IP process was used to fabricate uni-traveling-carrier photodiodes (UTC-PD's) integrated with millimeter-wave coplanar waveguides (CPW) on package compatible sapphire with high yield. The performance of wafer-bonded UTC-PD's with 3-dB bandwidth of 102 GHz was similar to that of conventional devices, and the CPW's exhibited low dispersion.

Innovative Integration Based on Silicon-Core Technologies for Sensor and Communications Applications

“…The bonding of the UTC-PD to a sapphire substrate was first examined. 8 The process yield was a very respectable 90%, which is almost the same as what we obtain on an InP substrate. Over 100-GHz bandwidth was successfully demonstrated with this structure.…”

Edge-coupled membrane terahertz photonic transmitters based on metal–semiconductor–metal traveling-wave photodetectors

“…21 This technique has been adopted in the packaging of ultra-highspeed photodetectors for mass production purposes. 22 The geometric sizes of the measured devices are given in Table I, which has been used to simulate the frequency response of the S 11 parameter of this demonstrated structure. 23 The simulation results show a resonant frequency near 1.6 THz due to the resonant CPW fed slot antenna.…”

High‐power RF photodiodes and their applications

“…These photodiodes often face burn out before their saturation condition due to thermal effect. To transfer heat out of the photodiode effectively, use of Si substrate by wafer (epilayer) bonding [63,64], and metal to metal (heat spreader) bonding [65] has been examined.…”