Integrated optical directional couplers in silicon-on-insulator

Trinh, P.D.; Yegnanarayanan, Siva; Jalali, Bahram

doi:10.1049/el:19951453

Cited by 70 publications

(26 citation statements)

References 2 publications

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“…In a directional coupler, two waveguides are brought close together: This can be done either in a horizontal (side-by-side) arrangement [58,59] or in a vertical arrangement [60]. Alternatively, multi-mode interferometers can be used [61].…”

Section: Directional Couplersmentioning

confidence: 99%

Silicon microring resonators

Bogaerts

Heyn

Vaerenbergh

et al. 2011

Laser & Photonics Reviews

2,022

1,100

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Section: Directional Couplersmentioning

confidence: 99%

Silicon microring resonators

Bogaerts

Heyn

Vaerenbergh

et al. 2011

Laser & Photonics Reviews

2,022

1,100

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show abstract

“…Figure 2 eloquently shows the importance and advantages of the versatile silicon-on-insulator (SOI) waveguide platform [11], which has been progressing rapidly since 1991 [21,22]. The SOI platform has effectively become the benchmark platform for silicon photonics and several devices and photonic integrated circuits have been implemented on it since the mid-1990s [23][24][25][26][27]. The standard SOI waveguide technology is schematically represented later in the left structure of Figure 4.…”

Section: Can Silicon Homogenize Integrated Photonics?mentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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“…S EVERAL integrated optics switches and modulators based on planar and rib optical waveguides using silicon-oninsulator (SOI) materials have been proposed and realized at the fiber optic wavelengths 1.3 and 1.55 m [1]- [5]. These devices are based on free-carrier plasma dispersion effect to modulate the refractive index.…”

Section: I Ntroductionmentioning

confidence: 99%

Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 μm

Vonsovici

Orobtchouk

Köster

1997

J. Lightwave Technol.

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We present a new silicon-on-insulator (SOI) integrated optics structure to be used as an intensity light modulator at 1.3 m. The device consists of a waveguide Fabry-Perot interferometer. In association with a grating coupler this device could function as a spatial light modulator or a reflective-mode modulator. The Fabry-Perot reflectivity is tuned by free-carrier injection from a forward-biased lateral P + /N 0 /N + diode. Consequently, the reflected back guided-mode has an intensity that is a function of the effective index modulation in the central waveguide of the Fabry-Perot. Our numerical simulation reveals that such a structure could function for current densities not exceeding 500 A/cm 2 , with a cutoff frequency of 100 MHz. This new type of device is compatible with the mature silicon technology and could replace in applications the standard liquidcrystal spatial light modulators or for fiber-to-the-home intensity modulators.

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Integrated optical directional couplers in silicon-on-insulator

Cited by 70 publications

References 2 publications

Silicon microring resonators

Silicon microring resonators

Emerging heterogeneous integrated photonic platforms on silicon

Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 μm

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