2006 5th IEEE Conference on Sensors 2006
DOI: 10.1109/icsens.2007.355525
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Integrated Gigant Magnetic Resistance based Angle Sensor

Abstract: An integrated GMR (Giant-Magnetic-Resistance) sensor is presented for 3600 angular measurements of rotating magnetic fields in automotive applications. The spin-valve GMR-layers are directly applied to a standard semiconductor 0.22,um CMOS process by vertical integration of the sensorbridges atop of active circuitry. The entire integrated anglesensor comprises 2 orthogonal magnetized GMR-bridges for sine and cosine signal measurements, and the subsequent signal conditioning circuitry. The entire angular sen… Show more

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Cited by 26 publications
(16 citation statements)
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“…Alternatively the angle of the magnetic field can be detected by anisotropic magneto-resistors (AMR) [6] or giant magneto-resistors (GMR) [7], [8]. One particularly promising system uses GMRs integrated in a standard CMOS process (iGMR) [9]. All these sensors suffer from offset, gain mismatch, nonorthogonality, nonlinearity, cross-talk, hysteresis, and packaging effects [10], [11].…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively the angle of the magnetic field can be detected by anisotropic magneto-resistors (AMR) [6] or giant magneto-resistors (GMR) [7], [8]. One particularly promising system uses GMRs integrated in a standard CMOS process (iGMR) [9]. All these sensors suffer from offset, gain mismatch, nonorthogonality, nonlinearity, cross-talk, hysteresis, and packaging effects [10], [11].…”
Section: Introductionmentioning
confidence: 99%
“…We call this class of sensors that respond to the magnetic field components perpendicular to the rotation axis perpendicular angle sensors. These can be magnetoresistors (MR) like, e.g., anisotropic magneto-resistors (AMR) [1] or giant magneto-resistors (GMR) [2][3][4][5] or tunnelling magneto-resistors (TMR). Alternatively one may also use vertical Hall effect devices (VHall) [6].…”
Section: Introductionmentioning
confidence: 99%
“…The GMR effect is caused by the metallic multilayer films spin-dependent electron scattering, because the carrier of electrons with different spin states has different effects on the magnetic field, it will produce a change in resistance [4]. In multilayer films (Fe / Cr) N, with appropriate thickness of the non-magnetic layer, it will produce antiferromagnetic coupling between two adjacent ferromagnetic layers.…”
Section: Magnetic Azimuth Measurement Systemmentioning
confidence: 99%
“…W2np is the weights which connect the hidden layer and output layer. Usually, the output layer's transfer function of RBF neural network is a linear function, as shown as equation (4).…”
Section: Rbf Neural Network Structurementioning
confidence: 99%