Integrated continuous-wave aluminum nitride Raman laser

Liu, Xianwen; Sun, Changzheng; Xiong, Bing; Wang, Lai; Wang, Jian; Han, Yujie; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tongbo; Zhang, Yun; Wang, Junxi

doi:10.1364/optica.4.000893

Cited by 63 publications

(65 citation statements)

References 28 publications

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“…The significant reduction of waveguide loss in the lithium niobate on insulator (LNOI) platform [16,17] enabled the demonstration of resonators with Q pg. 4 factors beyond 10 million [18]. Its combined third and second order nonlinearities have also allowed soliton microcomb formation with intrinsic second-harmonic generation [19].However, despite the significant progress, there are still many challenges in the current technologies of integrated nonlinear photonics.…”

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confidence: 99%

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

et al. 2020

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†All three authors contributed equally to this work pg. 2 Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active integration, they suffered in the past from high waveguide losses that prevented the realization of highly efficient nonlinear processes on-chip. Here we challenge this status quo and demonstrate an ultra-low loss AlGaAs-on-insulator (AlGaAsOI) platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 10 6 . Such a high quality factor, combined with the high nonlinear coefficient and the small mode volume, enabled us to demonstrate a record low Kerr frequency comb generation threshold of ~36 µW for a resonator with a 1 THz free spectral range (FSR), ~100 times lower compared to that in previous semiconductor platform. Combs with >250 nm broad span have been generated under a pump power lower than the threshold power of state of the art dielectric micro combs. A soliton-step transition has also been observed for the first time from an AlGaAs resonator. This work is an important step towards ultra-efficient semiconductor-based nonlinear photonics and will lead to fully integrated nonlinear photonic integrated circuits (PICs) in near future. pg. 3 The extensive research on integrated nonlinear photonics in the last few years, driven by the breakthrough of the microcomb and other on-chip nonlinear devices, has opened up many new opportunities for on-chip integrated photonics, ranging from spectroscopy to atomic clock applications [1-3]. The demand to construct efficient nonlinear devices has motivated the development of different material platforms in nonlinear photonics. A common endeavor of those efforts is the reduction of the waveguide propagation loss, which is essential to enable high Q cavities so as to enhance the build-up power in the resonators and therefore increase the efficiency of the nonlinear optical processes [4]. In this regard, silica on silicon resonators [5-7] have long been dominant offering Q factors as high as 1 billion [6]. These devices can access a wide range of nonlinear effects including microwave rate soliton microcombs [8].However, over the last 5 years, there has been remarkable progress to significantly improve the Q factors of resonators in many other nonlinear integrated optical material platforms. One example is the Si3N4 platform, which delivers high performance in Kerr comb generation on chip [9][10][11]. The Si3N4 micro-resonators have enabled the generation of efficient frequency combs with repetition rates from microwave to THz frequencies [12] and improved Q factor of beyond 30 million [13,14]. Another material, which recently attracted attention, is LiNbO3. It offers additional opportunities for integrated nonlinear...

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Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

et al. 2020

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“…Recently demonstrated UV SHG [35,36] in AlN-on-sapphire devices was only observable using a pulsed pump while visible SHG in this platform [34] realized a low conversion efficiency due to the phase-mismatched condition. Lithography and etching challenges in processing thick (> 1 μm) AlN-on-sapphire films have proven as a barrier to achieving a fully-etched AlN waveguide [29][30][31][32], which is necessary to confine the phase-matched higher-order visible modes within the ring resonators.…”

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17 000%/W second-harmonic conversion efficiency in single-crystalline aluminum nitride microresonators

Bruch

Liu

Guo

et al. 2018

Applied Physics Letters

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101

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High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform for integrated nonlinear optics such as four wave mixing and Raman lasing, few studies have investigated this material for second-harmonic generation. In this Letter, we demonstrate an optimized fabrication of dually-resonant phase-matched ring resonators from epitaxial aluminum nitride thin films. An unprecendented second-harmonic generation efficiency of 17,000%/W is obtained in the low power regime and pump depletion is observed at a relatively low input power of 3.5 mW. This poses epitaxial aluminum nitride as the highest efficiency second-harmonic generator among current integrated platforms.

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“…The large transparency window (above 200 nm) of AlN also makes it robust to the optical damage induced by multi-photon absorption [31]. The AlN film is epitaxially grown on c-plane (0001) sapphire by metal-organic chemical vapor deposition, and has been developed for integrated nonlinear optics from near-VIS to infrared regions [30,[32][33][34][35]. Based on a single-crystalline AlN thin film, we have demonstrated a low-loss (∼8 dB cm −1 ) UV microring resonator [36], suggesting its capability for integrated UV photonics.…”

Section: Resultsmentioning

confidence: 99%

Beyond 100 THz-spanning ultraviolet frequency combs in a non-centrosymmetric crystalline waveguide

Liu

Bruch

et al. 2019

Nat Commun

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Ultraviolet frequency combs enable applications ranging from precision spectroscopy to atomic clocks by addressing electronic transitions of atoms and molecules. Access to ultraviolet light via integrated nonlinear optics is usually hampered by the strong material dispersion and large waveguide attention in ultraviolet regions. Here we demonstrate a simple route to chip-scale ultraviolet comb generators, simultaneously showing a gap-free frequency span of 128 terahertz and high conversion efficiency. This process relies on adiabatic quadratic frequency translation of a near-visible supercontinuum sourced by an ultrafast fiber laser. The simultaneous cubic and quadratic nonlinear processes are implemented in single-crystalline aluminum nitride thin films, where chirp-modulated taper waveguides are patterned to ensure a broad phase matching. The heterodyne characterization suggests that both the near-visible and ultraviolet supercontinuum combs maintain high coherence. Our approach is also adaptable to other non-centrosymmetric photonic platforms for ultrafast nonlinear optics with scalable bandwidth.

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Integrated continuous-wave aluminum nitride Raman laser

Cited by 63 publications

References 28 publications

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

17 000%/W second-harmonic conversion efficiency in single-crystalline aluminum nitride microresonators

Beyond 100 THz-spanning ultraviolet frequency combs in a non-centrosymmetric crystalline waveguide

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