Integrated CMOS-MEMS with on-chip readout electronics for high-frequency applications

Verd, J.; Uranga, A.; Teva, J.; Lopez, J.L.; Torres, F.; Estéve, J.; Abadal, G.; Pérez‐Murano, F.; Barniol, N.

doi:10.1109/led.2006.875147

Cited by 76 publications

(51 citation statements)

References 6 publications

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“…1͑a͔͒, without the need of any additional lithographic process. 12 The reported results corresponding to calibration, real time mass measurements, and resolution analysis indicate the benefits in terms of resolution and operation stability of a fully integrated mass sensor operating in air conditions, which has been fabricated using a conventional CMOS technology.Cantilever structures 10 m long ͑l͒, 600 nm wide ͑w͒, and 750 nm thick ͑t͒ ͓Fig. 1͑b͔͒ have been fabricated by using the top metal layer of a commercial 0.35 m CMOS technology.…”

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confidence: 83%

“…1͑b͔͒ have been fabricated by using the top metal layer of a commercial 0.35 m CMOS technology. 12,13 We use a three-electrode configuration constituted by the cantilever that is biased at a dc voltage ͑V dc ͒ and two electrodes for electrostatic excitation ͑V ac ͒ and capacitive readout purposes ͑V sense ͒, respectively. The cantilever displacement is detected with a full-custom designed readout CMOS circuit with a high-sensitivity and low-noise front-end stage.…”

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Monolithic mass sensor fabricated using a conventional technology with attogram resolution in air conditions

Verd

Uranga

Abadal

et al. 2007

Applied Physics Letters

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Monolithic mass sensors for ultrasensitive mass detection in air conditions have been fabricated using a conventional 0.35 m complementary metal-oxide-semiconductor ͑CMOS͒ process. The mass sensors are based on electrostatically excited submicrometer scale cantilevers integrated with CMOS electronics. The devices have been calibrated obtaining an experimental sensitivity of 6 ϫ 10 −11 g/cm 2 Hz equivalent to 0.9 ag/ Hz for locally deposited mass. Results from time-resolved mass measurements are also presented. An evaluation of the mass resolution have been performed obtaining a value of 2.4ϫ 10 −17 g in air conditions, resulting in an improvement of these devices from previous works in terms of sensitivity, resolution, and fabrication process complexity. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2753120͔ Cantilever-based sensors are very attractive transducers for physical, chemical, and biological sensors based on micro-/nanoelectromechanical systems 1-11 ͑NEMSs͒ due to its simplicity, wide range of sensing domains, and extremely high sensitivity when cantilever is scaled down into submicrometer scale dimensions. [6][7][8][9][10] One approach is the use of these cantilevers in dynamic mode for mass sensing applications where the mass is measured as a change of the resonance frequency. Monolithic integration of the cantileverbased transducer with readout electronics provides interesting advantages in terms of size, portability, and cost 10,11 in front of the use of optical readout techniques commonly used. [2][3][4][5][6][7][8][9] In previous works, 10 a post-complementary metal-oxidesemiconductor ͑CMOS͒ fabrication process based on a combination of electron beam lithography and direct write laser lithography has been used in order to define and release the cantilever of fully integrated mass sensors. In this letter, the mechanical structures are defined directly during the standard CMOS process used to fabricate the overall sensor ͑cantilever-based transducer plus readout circuitry ͓Fig. 1͑a͔͒, without the need of any additional lithographic process. 12 The reported results corresponding to calibration, real time mass measurements, and resolution analysis indicate the benefits in terms of resolution and operation stability of a fully integrated mass sensor operating in air conditions, which has been fabricated using a conventional CMOS technology.Cantilever structures 10 m long ͑l͒, 600 nm wide ͑w͒, and 750 nm thick ͑t͒ ͓Fig. 1͑b͔͒ have been fabricated by using the top metal layer of a commercial 0.35 m CMOS technology. 12,13 We use a three-electrode configuration constituted by the cantilever that is biased at a dc voltage ͑V dc ͒ and two electrodes for electrostatic excitation ͑V ac ͒ and capacitive readout purposes ͑V sense ͒, respectively. The cantilever displacement is detected with a full-custom designed readout CMOS circuit with a high-sensitivity and low-noise front-end stage. 14 The electrical scheme used presents an input capacitance as low as 11 fF and an input refereed noise of 21 nV/ Hz...

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confidence: 83%

mentioning

confidence: 99%

Monolithic mass sensor fabricated using a conventional technology with attogram resolution in air conditions

Verd

Uranga

Abadal

et al. 2007

Applied Physics Letters

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“…Hence, a built-in interface circuit is required. Several implementations based on the passive integration of I res through C par have been reported in the literature [6,10,11]. However, the resulting integration gain is still strongly dependent on the layout parasitics.…”

Section: Nems Read Out Schemementioning

confidence: 99%

“…Secondly, the NEMS current sensed by M4 is amplified by the geometry scaling factors 5,6 and N = (W/L) 11,12 (W/L) 9,10 of the two-stage cascode current mirrors M5-M8 and M9-M12 biased at V casp and V casn , respectively. In order to reduce the overall power consumption, a K/M fraction of the biasing is subtracted before the second amplification stage.…”

Section: Current Conveyor Circuitmentioning

confidence: 99%

“…Also, electromechanical devices can save power consumption and silicon area for specific functions compared to their purely electronic counterparts, specially in mobile applications. In particular, the possibility of using nanoelectromechanical systems (NEMS) to replace the costly and bulky quartz crystal devices is of high interest for the implementation of integrated oscillators [5,6].…”

Section: Introductionmentioning

confidence: 99%

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