2008 IEEE/ACM International Conference on Computer-Aided Design 2008
DOI: 10.1109/iccad.2008.4681660
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Integrated circuit design with NEM relays

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Cited by 122 publications
(103 citation statements)
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“…However, NEMs have relatively long mechanical switching delay [6] compared to the intrinsic delay of CMOS devices, and to this date, they suffer from low endurance [15]. To get the best of both worlds, researchers have combined NEMs and CMOS to build low-power and high performance circuits for critical components [9], [10].…”
Section: Introductionmentioning
confidence: 99%
“…However, NEMs have relatively long mechanical switching delay [6] compared to the intrinsic delay of CMOS devices, and to this date, they suffer from low endurance [15]. To get the best of both worlds, researchers have combined NEMs and CMOS to build low-power and high performance circuits for critical components [9], [10].…”
Section: Introductionmentioning
confidence: 99%
“…Nano-Electro-Mechanical (NEM) relays have an ideal sub-threshold behavior, where the 'off' leakage current is almost zero [2]. NEM relays are composed of 4 terminals like MOSFET devices.…”
Section: Introductionmentioning
confidence: 99%
“…NEM relays are composed of 4 terminals like MOSFET devices. However, in NEM relays, the mechanical channel is actuated by electrostatic force, instead of the electrical channel [2][3][4][5][6]. When the channel is turned off in NEM relays, it is disconnected mechanically from the both source and drain.…”
Section: Introductionmentioning
confidence: 99%
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