Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Romijn, Joost; Vollebregt, Sten; Middelburg, Luke M.; Mansouri, Brahim El; Zeijl, H.W. van; May, Alexander; Erlbacher, Tobias; Leijtens, Johan; Zhang, Guoqi; Sarro, P.M.

doi:10.1038/s41378-022-00446-3

Cited by 21 publications

(7 citation statements)

References 48 publications

(43 reference statements)

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“…For example, the channel mobility of SiC p-channel MOSFETs is typically 10–14 cm 2 /Vs on a lightly doped n-body, and decreases to 4–6 cm 2 /Vs on a relatively heavily-doped body [ 45 , 46 ]. Nevertheless, various SiC CMOS ICs have successfully been demonstrated [ 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 ].…”

Section: Resultsmentioning

confidence: 99%

“…Other than high-temperature operation, a very high resistance against γ-ray irradiation over 1 MGy was achieved for SiC CMOS-based transimpedance amplifiers for nuclear plant applications [ 51 ], which is surprising because it was presumed that resistance against irradiation is limited by the gate oxide damage rather than SiC bulk defects. Another interesting approach is the fabrication of a multi-pixel UV image sensor integrated with a readout circuit in SiC CMOS technology [ 52 ]. Owing to the wide bandgap of SiC, the sensor is inherently “solar blind” and the sensitive spectral bandwidth of the UV detector is much narrower than the Si-based UV detector, which makes this device attractive for flame detection, healthcare, etc.…”

Section: Resultsmentioning

confidence: 99%

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Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

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In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

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“…Due to their excellent photoelectric properties and physicochemical stability, SiC devices have been widely used in many research fields, such as engine turbines [1], sensors [2][3][4], accelerometers [5,6], electronic circuits [7][8][9][10], biomedicine [11], and thermal piezoresistive devices [12,13]. By designing and processing various micro-fine and micronanostructures on SiC wafers, researchers have realized functional applications that are not available in conventional Si-based microelectromechanical systems (MEMS) devices.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Quan,

Wang,

et al. 2024

Micromachines

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Silicon carbide (SiC) is widely used in many research fields because of its excellent properties. The femtosecond laser has been proven to be an effective method for achieving high-quality and high-efficiency SiC micromachining. In this article, the ablation mechanism irradiated on different surfaces of 6H-SiC by a single pulse under different energies was investigated. The changes in material elements and the geometric spatial distribution of the ablation pit were analyzed using micro-Raman spectroscopy, Energy Dispersive Spectrum (EDS), and an optical microscope, respectively. Moreover, the thresholds for structural transformation and modification zones of 6H-SiC on different surfaces were calculated based on the diameter of the ablation pits created by a femtosecond laser at different single-pulse energies. Experimental results show that the transformation thresholds of the Si surface and the C surface are 5.60 J/cm2 and 6.40 J/cm2, corresponding to the modification thresholds of 2.26 J/cm2 and 2.42 J/cm2, respectively. The Raman and EDS results reveal that there are no phase transformations or material changes on different surfaces of 6H-SiC at low energy, however, decomposition and oxidation occur and then accumulate into dense new phase material under high-energy laser irradiation. We found that the distribution of structural phase transformation is uneven from the center of the spot to the edge. The content of this research reveals the internal evolution mechanism of high-quality laser processing of hard material 6H-SiC. We expect that this research will contribute to the further development of SiC-based MEMS devices.

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“…Very recently, He et al presented a MSM 4H-SiC photodetector with the assistance of epigraphene, which exhibited an extremely high external quantum efficiency (EQE) [12]. What's most exciting is that Romiji et al integrated an 8 × 8 4H-SiC photodetector array with an on-chip 4H-SiC readout circuit processed by complementary metal-oxide-semiconductor technology [13]. However, the fact that 4H-SiC based photodetectors that adhere to conventional principles cannot discriminate wavelengths remains a significant challenge.…”

Section: Introductionmentioning

confidence: 99%

A highly sensitive filterless narrowband 4H-SiC photodetector employing a charge narrowing strategy

Geng

et al. 2023

J. Phys. D: Appl. Phys.

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Silicon carbide (SiC) semiconductor with wide bandgap has aroused intensive attentions because they can endure harsh environments and high temperatures. SiC photodetectors based on conventional principles usually detect UV light without the ability of wavelength discrimination. Here, resorting to the charge narrowing collection principle, we realize a highly sensitive filterless narrowband 4H-SiC photodetector. The 4H-SiC layer is sufficiently thick to facilitate charge collection narrowing of the device’s external quantum efficiency spectrum, inducing a full width at half-maxima of 14.5 nm at the peak wavelength of 355 nm. Thanks to the Fermi level pinning effect, the proposed photodetector can fully eliminate the injection current; thus it works as a photovoltaic type device with a remarkably low dark current. Consequently, the devices renders a photo-to-dark current ratio as high as 4×107, superior to the performances of most of reported 4H-SiC UV photodetectors. In addition, the device can detect light signals with a power density as low as 96.8 pW/cm2, more than two orders of magnitude superior to that of the commercial product based on the photodiode principle. Moreover, it can endure high temperature of 350 °C, demonstrating bright prospects in harsh industry conditions.

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Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Cited by 21 publications

References 48 publications

Emerging SiC Applications beyond Power Electronic Devices

Emerging SiC Applications beyond Power Electronic Devices

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

A highly sensitive filterless narrowband 4H-SiC photodetector employing a charge narrowing strategy

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