Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructures

Mircéa, A.; Mellet, R.; Rose, B.; Dasté, P.; Schiavini, G. M.

doi:10.1016/0022-0248(86)90321-0

Cited by 43 publications

(3 citation statements)

References 3 publications

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“…4 A frit of suitable size ͑area and thickness͒ is inserted between the MO charge and the carrier gas. 4 A frit of suitable size ͑area and thickness͒ is inserted between the MO charge and the carrier gas.…”

Section: Gas Regulationmentioning

confidence: 99%

High growth rate of III–V compounds by free carrier gas chemical beam epitaxy

Benchimol

Juhel

Petitjean³

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We present in this article a simple and economic gas line designed for low vapor pressure metalorganic sources introduced into a chemical beam epitaxy chamber without carrier gas. This gas line was tested with triethylgallium and trimethylindium for the growth of GaAs and InP layers. The high conductance of the line allowed minimizing the heating of the source and reaching growth rate as high as 12 m/h for GaAs. The lower InP growth rate was attributed to the higher viscosity of trimethylindium compared to triethylgallium.

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Section: Gas Regulationmentioning

confidence: 99%

High growth rate of III–V compounds by free carrier gas chemical beam epitaxy

Benchimol

Juhel

Petitjean³

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The three way switching valves therefore have an unpurged volume less than 0.1 cm 3. A pressure control device is applied after the vent-run manifold in order to keep the same pressure in all organometallic bubblers, which enables good homogeneity in ternary and quaternary layers (24). One of the gas channels is also equipped with an ultrasonic organometallic concentration meter (25).…”

Section: General Design Considerations--frommentioning

confidence: 99%

Design and Performance of a New Reactor for Metal Organic Vapor Phase Epitaxial Growth of Extremely Uniform Layers

Nordell

Andersson

Landgren

1992

J. Electrochem. Soc.

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We have designed and built a new metal organic vapor phase epitaxy reactor for single wafer, low pressure operation employing a very large width-to-height aspect ratio to meet the demands on uniformity over a large area. The uniformity obtained under various growth conditions have been mapped using high resolution analytical techniques capable of sufficient accuracy in the determination of the significant material parameters. Doping uniformities are used to accurately evaluate temperature gradients across the susceptor. The results compare favorably with expectations, thereby confirming the design rules presented in the paper. Thickness uniformities of better than + 1% over full 50 mm diam are obtained and compositional deviations are within -+ 0.3 atomic percent over 40 mm diameter for all components in the A1GaAs as well as in the InGaAsP system. Over the same area the wavelength uniformity of quaternary InGaAsP is better than -+ 1 nm at )~ = 1.56 ~m. These numbers represent some of the best uniformity data ever reported.

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“…The epitaxies were carried out in two different systems: (i) at atmospheric pressure in a reactor with rotating susceptor for single 2" wafers, described in previous publications [4] ; (ii) at low pressure (70 Torr) in a prototype production reactor with rotating susceptors for three 2" wafers. For conciseness, we report here only results from the first system.…”

Section: Methodsmentioning

confidence: 99%