Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures

Near‐Unity External Quantum Efficiency in GaAs|AlGaAs Heterostructures Grown by Molecular Beam Epitaxy

“…For low initial carrier injection or at late times, only the A term in Equation ( 1) is significant, resulting in PLðtÞ ∝ BNðtÞ 2 ∝ e À2AðTÞt . [16] In the presence of dopants (impurities, unintentional for this work), the A coefficient also contains contributions from the radiative and Auger recombination mechanisms, and is modified as…”

“…[14] Furthermore, the density dependence of the B coefficient, resulting from many-body interactions, must be accounted for. [19] These mechanisms, responsible for such log-linear decays, are as follows: [15,16] SRH bulk recombination (nonradiative, A), a subset of SRH recombination called interface recombination (nonradiative, A), radiative impurity (trap) recombination (BN d ), and Auger impurity (trap) recombination (CN 2 d ). Auger impurity recombination can be excluded as this mechanism requires impurity density >1 Â 10 18 cm À3 to achieve any relevant contribution to the decay rate, and the sample under study is not intentionally doped.…”

“…[14,15] Each of these effects can be investigated using time-resolved photoluminescence (TRPL) experiments. [16]…”

Study on Photochemical Properties of a Sr-SnS2/CaIn2S4 Heterostructure to Improve Cr(VI) Removal

“…From Figure 5b, the average lifetime of carriers of CaIn 2 S 4 , Sr-SnS 2 , and the SSCS-3 were 1.1706, 1.4210, and 2.2808 ns, respectively, which were fitted by an exponential function. 58,59 SSCS-3 shows the longest average lifetime, indicating that the heterostructure fabricated can prolong the lifetime of the charge carriers so that the charge carriers will migrate to the surface of the active sites and then participate in the photocatalytic process with high probability.…”