Instability of “slow” solid‐liquid interface relaxation before the hetero‐LPE of III‐V compounds

Abstract

Results of specially designed experiments supplemented by numerous literature examples have been analysed in attempt to elucidate the processes occurring a t the interface between saturated niulticomponent liquid and a non-equilibrium solid before the hetero-LPE of nearly lattice-matched 111-V compounds. The "slow" interface relaxation which provides the moving of non-equilibrium solid-liquid system in the direction of thermodynamic equilibrium by solid-state diffusion (and which was previously believed to be the only way of equilibrium approach in lattice-matched systems) looses the stability in some cases, being replaced by "fast" relaxation. It has been shown that the liquid-solid interface instability develops due to a collective action of several factors, and their particular combinat,ion produces definite mode of relaxation. The "slow" relaxation would be unstable, if, as a result of underlying solid dissolution: (1) the lattice parameter of equilibrium solid decreases continuously with respect to that of the substrate, increasing thereby the driving force for dissolution; (11) the solubility of group V component in a changed liquid increases. In a majority of cases the switching to "fast" relaxation is facilitated by (111) the initial negative difference between the lattice parameters of equilibrium and underlying solids a t the growth temperature.

Croissance par épitaxie en phase liquide et caractérisation d'alliages Ga1-xIoxAsySb1-y à paramètre de maille accordé sur celui de GaSb

“…En particulier la vitesse de dissolution du substrat, très rapide, semble indépendante de la face cristalline, contrairement aux résultats obtenus par Nakajima et al avec le système GaInAs/InP[21]. Nous avons montré par ailleurs[16] que le modèle de relaxation de type EBR (Etch Back Regrowth) proposé par Bolkhovityanov[22,23] interprétait ce comportement avec àala.…”

Исследование переходных областей гетероструктур InAsPSb/InAs, полученных методом газофазной эпитаксии из металлоорганических соединений

“…Для широко распространенного ранее метода жидкофазной эпитаксии (ЖФЭ) проводились специальные исследования условий формирования переходных областей между слоя-ми гетероструктуры, выводы делались на основе качества поверхности эпитаксиального слоя [4]. Процесс ЖФЭ принято рассматривать как близкий к равновесному, за счет чего становится возможным межфаз-ное перераспределение компонентов, затрагивающее подложку, которое приводит к нерезкости границ.…”