Instability in vacuum deposited silicon oxide

Swystun, E.J.; Tickle, Andrew C.

doi:10.1109/t-ed.1967.16103

Cited by 16 publications

(4 citation statements)

References 15 publications

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“…Physics Abstracts 8.740 In many dielectrics a relaxation mechanism determines the dielectric properties [1]. Similar properties have also been observed on evaporated SiO dielectrics containing mobile ions [21 and measurements with diffèrent electrode materials indicate the existence of surface traps for these mobile ions [3]. In order to describe the dielectric properties, a theoretical model has been proposed in which the ions can relax between the traps located at the two electrodes [4].…”

Section: Classificationmentioning

confidence: 79%

Cole-cole diagram of the non linearised relaxation equation

Mey¹

1974

J. Phys. France

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Section: Classificationmentioning

confidence: 79%

Cole-cole diagram of the non linearised relaxation equation

Mey¹

1974

J. Phys. France

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“…OtOx (1) where j denotes the current carried by the mobile ions. With D the diffusion constant and # the mobility, we get for j:…”

Section: On ~Jmentioning

confidence: 99%

“…Thin dielectric layers obtained by vacuum evaporation or R. F. sputtering often show the presence of mobile ions [1], [2], [3], [4], [5]. This phenomenon leads to a Debye type polarisation mechanism [6].…”

Section: Introductionmentioning

confidence: 99%

An integral equation method for the numerical calculation of ion drift and diffusion in evaporated dielectrics

Mey¹

1976

Computing

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--Zusammenfassung An Integral Equation Method for the Numerical Calculation of Ion Drift and Diffusion in EvaporatedDielectrics. A method is presented to solve the partial differential equation for a time dependent drift --diffusion process in a one dimensional finite space. The method is based on an integral equation technique, which is easily solved numerically on a digital computer. This technique has been used to study the transport phenomenon of mobile ions in evaporated dielectrics under influence of an electric field.Eine Integralgleicbungsmethode zur numerischen Berechnung der StriJmung und Diffusion yon Ionen in evakuierten Dielectrica. Es wird eine Methode vorgelegt, um die partielle Differentialgleichung fiir einen zeitabhfingigen Str6mungs-DiffusionsprozeB in einem eindimensionalen endlichen Raum zu 16sen. Die Methode beruht auf einer Integralgleichungstechnik, die leicht mit Hilfe yon Ziffernrechenanlagen durchgeffihrt werden kann. Die Technik wurde dazu verwendet, den Transport yon beweglichen Ionen in evakuierten Dielectrica unter dem Einflu• eines elektrischen Feldes zu studieren.

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“…When we apply a step voltage V across the capacitor, equation (3) combined with (4) to (6) and (7) can be solved analytically, because the electric field E =V/d (d thickness of the dielectric) is constant. The space-charge effect of the ions on the voltage distribution i s neglected.…”

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confidence: 99%