Inspection of n-type InP crystals by scanning photoluminescence measurements

Krawczyk, Stanisław; Krafft, F.; Klingelhofer, C.; Garrigues, M.; Schohe, K.

doi:10.1088/0268-1242/7/1a/014

Cited by 9 publications

(1 citation statement)

References 16 publications

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“…The optical and electrical homogeneities across whole substrates are very important to obtain a high yield in manufacturing III-V compound semiconductor devices. Scanning photoluminescence (sPL) measurements have been widely used to assess the homogeneity of substrates, because PL of band to band and/or donor acceptor pair recombination is connected with doping homogeneity or charge carrier lifetime [1,2]. However, only few reports were given with a quantitative analysis of the PL data.…”

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confidence: 99%

Homogeneity assessment of large‐diameter III‐V compound semiconductor substrates by near‐infrared transmittance measurement

Inoue

Kitamoto

Yamada

et al. 2007

Phys. Status Solidi (c)

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The light absorption mechanisms below the fundamental energy gap in undoped and Si-doped GaAs crystals have been investigated to assess EL2 defects and the carrier concentration distribution in III-V compound semiconductor substrates. It is demonstrated, that the near-infrared transmittance mapping equipment consisting of a high-brigthness LED, a high-sensitivity CCD camera, and a digital image processing system is capable to reveal surface scratches and local crystal imperfections such as inclusions, voids, and twining inside the substrate, besides EL2 defects and the carrier concentration distribution. Hence, the homogeneity of III-V compound semiconductor substrates with diameter up to 6 inches can be assessed in less than several seconds with high spatial resolution of 640×480 pixels.

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Section: Introductionmentioning

confidence: 99%

Homogeneity assessment of large‐diameter III‐V compound semiconductor substrates by near‐infrared transmittance measurement

Inoue

Kitamoto

Yamada

et al. 2007

Phys. Status Solidi (c)

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Some new results in porous silicon

et al. 1994

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Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested.

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