Inspection of 32nm imprinted patterns with an advanced e-beam inspection system

Xiao, H.; Ma, Long; Wang, Fei; Zhao, Yan; Jau, Jack; Selinidis, Kosta; Thompson, Ecron; Sreenivasan, S. V.; Resnick, Douglas J.

doi:10.1117/12.833419

Cited by 7 publications

(3 citation statements)

References 6 publications

(4 reference statements)

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“…Long scan times are the main challenge that these systems must overcome to supplant optical inspection as the workhorse physical defect detection tools in volume manufacturing, although it should also be noted that EBI will not be sensitive to certain buried defect types such as oxide voids. Published pixel throughputs for commercially available systems cap out at 400 MHz 13 with defect-to-pixel size ratios commonly around 1:1 for complete capture of physical defects 14 . These equipment parameters projects to a physical defect scan rate on present systems of 11.3 cm 2 per hour (53.1 hours per 600 cm 2 wafer) for a 28nm defect, almost 2 orders of magnitude below the specification of 1000 cm 2 per hour.…”

Section: Disruptive Technologies -Electron Beam Inspectionmentioning

confidence: 99%

“…Relatively low speed EBI equipment is commonly in use, principally in the detection of voltage contrast defects 11,12 . Long scan times are the main challenge that these systems must overcome to supplant optical inspection as the workhorse physical defect detection tools in volume manufacturing, although it should also be noted that EBI will not be sensitive to certain buried defect types such as oxide voids.…”

Section: Disruptive Technologies -Electron Beam Inspectionmentioning

confidence: 99%

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Defect metrology challenges at the 11-nm node and beyond

Crimmins

2010

SPIE Proceedings

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Rapid, inline inspection of wafers and reticles for minimum pitch defects is expected to be a significant technical challenge at the 11nm node. With the possible future adoption of EUV lithography, increasingly exotic materials and complex device architectures, projecting end user requirements is a difficult feat 4 to 5 years out. The present work progresses through projections of these requirements and surveys the various options available to the industry, supported by microscopy simulations. The main conclusion is that the industry needs to support pathfinding projects to develop super-resolution techniques, wavelength scaling and highly multiplexed, high defect contrast ebeam inspection.

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Section: Disruptive Technologies -Electron Beam Inspectionmentioning

confidence: 99%

Section: Disruptive Technologies -Electron Beam Inspectionmentioning

confidence: 99%

Defect metrology challenges at the 11-nm node and beyond

Crimmins

2010

SPIE Proceedings

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“…We also studied the capability of EBI capturing of program defects on 32nm nano imprint resist patterns. [4], [5]. We studied the CD variation before and after EBI in 65nm PR pattern, which showed less than 3% shrinkage.…”

Section: Introductionmentioning

confidence: 99%

After development inspection defectivity studies of an advanced memory device

Kim

Lee

et al. 2010

SPIE Proceedings

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In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced electron beam inspection (EBI) system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges. We also studied the critical dimension (CD) variations caused by the optical inspection and EBI.

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