IEEE Trans. Electron Devices
 2023
DOI: 10.1109/ted.2023.3267756
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Insight Into the Leakage Current Transport Mechanism Transformation in β-Ga2O3 SBDs Under Forward Bias Stress

Ailing Pan
1
,
Yingzhe Wang
2
,
Xuefeng Zheng
3
et al.
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