2017
DOI: 10.1016/j.carbon.2017.01.022
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Insight into boron-doped diamond Raman spectra characteristic features

Abstract: a b s t r a c tCharacteristic Raman features of boron-doped diamond layers with metallic conduction are studied experimentally and discussed in comparison with an extensive selection of literature data. Despite evidence that the main Raman bands are mostly characteristic features of carbon atom vibration modes, their position is found to be proportional to boron concentration. While the origin of the Raman bands located at c.a. 500 cm À1 remains unclear, the band centred at c.a. 1200 cm À1 is attributed to a m… Show more

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Cited by 112 publications
(36 citation statements)
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References 46 publications
(30 reference statements)
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“…1350 cm −1 is a combination of the diamond ZCP and the B2 bands antiresonances. The Fano asymmetric parameter values of the B2 band are remarkably close to the ones of the ZCP line, which are consistent with values reported in the literature [1][2][3][4][5][6] and the position and the width of the diamond line are also consistent with our previous report [20]. The fitting peak position of the B2 band (1250 cm −1 ) corresponds to the reported maxima of diamond PDoS [16] which supports our analysis and confirms the PDoS origin of this band.…”
Section: Resultssupporting
confidence: 92%
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“…1350 cm −1 is a combination of the diamond ZCP and the B2 bands antiresonances. The Fano asymmetric parameter values of the B2 band are remarkably close to the ones of the ZCP line, which are consistent with values reported in the literature [1][2][3][4][5][6] and the position and the width of the diamond line are also consistent with our previous report [20]. The fitting peak position of the B2 band (1250 cm −1 ) corresponds to the reported maxima of diamond PDoS [16] which supports our analysis and confirms the PDoS origin of this band.…”
Section: Resultssupporting
confidence: 92%
“…This analysis indicates that the difference between the apparent position of the B1 band and the position of the maximum of PDoS in disordered diamond is not only due to phonon confinement but it is also due its interaction with electronic Raman scattering, i.e. Fano effect, conformably with the ZCP line [20]. This analysis is also analogous to Yogi et al work on silicon nanostructures who report the observation of a size-dependent position asymmetric peak due to acoustic phonons by Raman spectroscopy due to the quantum confinement effect and their interaction with intraband quasi-continuum [33].…”
Section: Resultsmentioning
confidence: 88%
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“…825 o C, as measured with a disappearing filament optical pyrometer. These deposition conditions produced a diamond film that was ∼2–4 μm thick with a doping level in the low 10 21 cm ‐3 range, based on Raman spectroscopic analysis , and an electrical resistivity of ≤0.01 ohm‐cm. At the end of the deposition, the CH 4 and B 2 H 6 flows were stopped.…”
Section: Experimental Methodssupporting
confidence: 69%