InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high-k dielectric

Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming‐Kwei

doi:10.1007/s00339-016-0165-x

Cited by 3 publications

(2 citation statements)

References 35 publications

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“…The improvement in dark and light I–V characteristics (Figure ) when using Oxide 2 instead of Oxide 1 indicates a passivation effect of the sidewall surface. Determining the mechanism behind is beyond the scope of our current study, but we note that Oxide 2 uses TMA as one of the precursors (see Methods for deposition conditions), which has been ascribed to give a “self-cleaning” effect of planar III–V semiconductor surfaces. − Another possible contributing factor is effects of the surface oxide on device performance through charge transfer and field-effects, which can be especially significant in large surface-to-volume ratio structures like nanowires . We believe that there is potential to further optimize the passivating oxide, and hence the nanowire solar cell performance.…”

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confidence: 99%

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements

et al. 2018

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III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

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confidence: 99%

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements

et al. 2018

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“…However, InP is prone to the formation of interfacial defects, which can limit the operating performance of the device [10]. Also, a surface with many chemical impurities can have a considerable impact on the performance of InP MOS capacitors [11].…”

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confidence: 99%

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Lü

Yan

et al. 2021

Nanomaterials

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In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

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Impact of NaOH solution surface treatment on Al₂O₃/β-Ga₂O₃ MOS capacitors

Fang,

Liao,

et al. 2024

Semicond. Sci. Technol.

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A suitable semiconductor surface treatment could improve the gate dielectric quality and reduce the interface states and traps to enhance the performance of metal–oxide semiconductor capacitors (MOSCAPs). In this paper, β-Ga2O3 surface treatment using NaOH solution prior to atomic layer deposition of Al2O3 was investigated. In comparison with piranha pretreatment, MOSCAPs with NaOH solution surface pretreatment show a larger maximum accumulation capacitance with less frequency dispersion, reduced charges/traps and interface state density D it. The improvement in MOSCAPs performance could be attributed to the NaOH solution pretreatment induced slight surface etching effect and relatively effective hydroxylation surface. These results suggest that the process optimization of NaOH solution surface pretreatment could lead to further improvement of β-Ga2O3 MOSCAPs and have a potential in application of β-Ga2O3 metal–oxide semiconductor field-effect transistors in the future.

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InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high-k dielectric

Cited by 3 publications

References 35 publications

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Impact of NaOH solution surface treatment on Al₂O₃/β-Ga₂O₃ MOS capacitors

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InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high-k dielectric

Cited by 3 publications

References 35 publications

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors

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Impact of NaOH solution surface treatment on Al₂O₃/β-Ga₂O₃ MOS capacitors