InP Gunn-Effect Devices for Millimeter-Wave Amplifiers and Oscillators

Hamilton, R.J.; Fairman, Robert; Long, S.I.; Omori, M.; Fank, F.B.

doi:10.1109/tmtt.1976.1128959

Cited by 15 publications

(3 citation statements)

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“…The maximum power gain of devices with L C = 6, 4, and 2 μm is 10 dB at 31.0 GHz, 15 dB at 47.8 GHz, and 4.5 dB at 97.6 GHz, respectively, and their 3‐dB bandwidth is 12.6, 5.2, and 35.0 GHz, respectively. Power gain and band width of the devices can be further improved by using matching networks …”

Section: Resultsmentioning

confidence: 99%

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Two‐terminal InGaAs microwave amplifier

Wang

Zhang

Shi

et al. 2018

Micro & Optical Tech Letters

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The feasibility of using a 2‐terminal InGaAs planar Gunn structure as a microwave amplifier is proposed and verified. By achieving a pronounced negative differential resistance with a peak‐to‐valley current ratio of 1.20, our devices are able to amplify microwaves at a high gain of 17 dB. When compared with commonly used 3‐terminal transistor‐based microwave amplifiers, the proposed devices not only have a simple structure but also are capable of achieving high operating frequencies even with relatively large feature sizes. The device with a channel length of 4 μm has a positive gain up to about 77 GHz, and the 2‐μm device is able to amplify microwaves well beyond 110 GHz. Furthermore, the planar Gunn amplifier shows a good linearity over a wide input power range from −45 to about 0 dBm. A good operation stability has also been demonstrated despite having no substrate thinning and heat sink.

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Section: Resultsmentioning

confidence: 99%

“…Power gain and band width of the devices can be further improved by using matching networks. 28 It can be seen in Figure 3A,B that devices with short channels can work at high frequencies.…”

Section: R E S U L T S a N D Discussionmentioning

confidence: 98%

Two‐terminal InGaAs microwave amplifier

Wang

Zhang

Shi

et al. 2018

Micro & Optical Tech Letters

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show abstract

“…Motivation for this investigation is based on theoretical and experimental studies which have shown that InP devices exhibit excellent performance at millimeter wavelengths (1,2). Indium phosphide Is also.…”

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confidence: 99%