InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s

Makon, R. E.; Driad, R.; Lösch, R.; Rosenzweig, J.; Schlechtweg, M.; Ambacher, O.

doi:10.1049/el.2009.2459

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“…6. The offset voltage and breakdown voltage are 0.2 and 1.2 V, respectively, with a very high current gain of ß ¼550 at V CE ¼1.0 V. Compared with the latest literature [11,12] and some former relevant work [3,7], there is a high current gain but poor breakdown voltage. The high ß benefits from the acceleration of electrons, small base thickness and the low doping level in the base, all of which lead to a low carrier recombination in the base region.…”

Section: Resultsmentioning

confidence: 80%