InP-based Quantum Cascade Lasers Monolithically Integrated onto Si and GaAs Substrates

Go, Rowel; Krysiak, H.; Fetters, Matthew; Figueiredo, Pedro; Suttinger, Matthew; Leshin, Jason; Fang, X. M.; Fastenau, J. M.; Lubyshev, D.; Liu, A. W. K.; Eisenbach, A.; Furlong, Mark J.; Lyakh, Arkadiy

doi:10.1364/cleo_si.2018.sf2g.4

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…Therefore, data demonstrate that, unlike band-to-band transition devices, the ISB absorption is very tolerant to extended defects. We note that these findings are consistent with recent results obtained for intersubband devices with As and Sb heterostructures grown on foreign substrates [47,48]. The larger ISB absorption linewidths for the structures grown on a-GaN/r-sap can be partially explained by the surface morphology (Fig.…”

Section: Resultssupporting

confidence: 92%

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and

Monavarian

Khoury

et al. 2021

Phys. Rev. Applied

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We report on the impact of structural defects on mid-infrared intersubband (ISB) properties of GaN/(Al, Ga)N heterostructures grown by ammonia molecular beam epitaxy (NH 3 MBE). Twenty-period GaN/(Al, Ga)N multi-quantum-well (MQW) heterostructures are grown on co-loaded a-plane freestanding GaN substrates and heteroepitaxial a-plane GaN on r-plane sapphire templates (a-GaN/r-sap) for three different quantum-well (QW) widths (3.0, 3.3, and 3.7 nm). Co-loaded structures grown on freestanding a-plane with no basal-plane stacking faults (BSFs), prismatic stacking faults (PSFs), and partial dislocations (PDs), with low threading dislocation (TD) densities of about 10 5 cm −2 are compared with those grown on a-GaN templates on (10 12) r-sapphire with BSF, PSF, PD, and TD densities of about 4 × 10 5 to 10 6 cm −2 , 5 × 10 3 to 2 × 10 4 cm −2 , about 9 × 10 10 to 2 × 10 11 cm −2 , and about 10 10 cm −2 , respectively. Fourier-transform infrared absorption spectroscopy indicates ISB transition energies in the range of about 250-300 meV (wavelength range 4.1-4.8 µm) for MQWs with different QW widths. The ISB absorption spectra indicate about 5% smaller transition energies and only about 10%-20% larger spectral linewidths for structures grown on a-GaN/r-sapphire templates compared with those on freestanding GaN substrates. The strong defect tolerance in the nonpolar a-plane ISB structures could be due to the nature of defects and their energy levels with respect to the conduction-band minima, which do not affect the ISB properties. Our results pave the way toward the production of low-cost scalable nonpolar III-nitride MQW heterostructures for a variety of passive and active optical materials and devices based on intersubband transitions.

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Section: Resultssupporting

confidence: 92%

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and

Monavarian

Khoury

et al. 2021

Phys. Rev. Applied

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“…Even though the GaP buffer layer has also been utilized, it was known to be less effective in terms of TDD, residual stress, and quality of InP, compared with the GaAs buffer layer [172][173][174]. Besides, the employment of compositionally graded buffer layer, including InGaAs, InGaP, InAlAs, and InGaAlAs alloys, has shown successful reduction of the TDD in InP/GaAs [175][176][177][178]. For example, Quitoriano et al [175], who studied graded buffers grown on GaAs substrates to obtain high-quality InP without phase separation, demonstrated low TDD of 1.2 × 10 6 cm -2 through the hybrid InGaAs and InGaP graded buffer layer.…”

Section: Intermediate Buffer Layermentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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InP-based Quantum Cascade Lasers Monolithically Integrated onto Si and GaAs Substrates

Cited by 2 publications

References 5 publications

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and

Heteroepitaxial Growth of III-V Semiconductors on Silicon

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