InP-Based Mach–Zehnder Modulator With Capacitively Loaded Traveling-Wave Electrodes

Akiyama, Suguru; Itoh, Hideo; Sekiguchi, Satoshi; Hirose, Shinichi; Takeuchi, Tatsuya; Kuramata, Akito; Yamamoto, Toshiro

doi:10.1109/jlt.2007.915278

Cited by 22 publications

(12 citation statements)

References 14 publications

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“…At the same time, the microwave loss is reduced by using a series push-pull (SPP) structure. SPP modulators with slow-wave effect from capacitive loading have been studied extensively in III-V compound semiconductor technologies [3,[5][6][7][8][9]. However, silicon SPP modulators have been reported by only a few select groups [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…Silicon TWMZMs with unloaded slow-wave electrodes have been published in [11,[14][15][16], of which only [11] and [16] are SPP. Due to the tremendous research on the topic of EO modulators, detailed electrode design and analysis have also been reported abundantly, particularly in compound semiconductor modulators [3,[5][6][7][8][9]. In silicon-on-insulator (SOI), notable transmission line modeling are described in [14,[17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator

Patel¹,

Ghosh²,

Chagnon³

et al. 2015

Opt. Express

176

105

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The design and characterization of a slow-wave series push-pull traveling wave silicon photonic modulator is presented. At 2 V and 4 V reverse bias, the measured -3 dB electro-optic bandwidth of the modulator with an active length of 4 mm are 38 GHz and 41 GHz, respectively. Open eye diagrams are observed up to bitrates of 60 Gbps without any form of signal processing, and up to 70 Gbps with passive signal processing to compensate for the test equipment. With the use of multi-level amplitude modulation formats and digital-signal-processing, the modulator is shown to operate below a hard-decision forward error-correction threshold of 3.8×10^-3 at bitrates up to 112 Gbps over 2 km of single mode optical fiber using PAM-4, and over 5 km of optical fiber with PAM-8. Energy consumed solely by the modulator is also estimated for different modulation cases.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator

Patel¹,

Ghosh²,

Chagnon³

et al. 2015

Opt. Express

176

105

View full text Add to dashboard Cite

show abstract

“…1(a) [8]. With such CL TWE design [10,11], the electrical fields propagate between the signal and ground pads of the transmission line rather than inside the III-V mesa, which significantly reduces the electrical propagation loss. Additionally, a slotline structure was employed for this hybrid MZM in order to fulfill two requirements.…”

Section: Introductionmentioning

confidence: 99%

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp

Chen¹,

Peters²,

Bowers³

2011

Opt. Express

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“…Meanwhile the development of novel materials with large r eo , advanced monolithic fabrication techniques and the need for size reduction and integration have been fueling the research efforts toward development of MZ optical modulators based on polymer and semiconductor materials. Integrated chip based traveling wave MZ modulators with very small V π and footprint have been demonstrated based on electro-optic polymers 20 , silicon 21,22 , and III-V compounds GaAs 23,24 . Resonant RF electrodes: Beside reducing the distance between the microwave electrodes, one can also enhance the intensity of the modulating field through RF resonance.…”

Section: Mach-zehnder (Mz) Intensity Modulatormentioning

confidence: 99%

Photonic microwave receivers based on high-Q optical resonance

Hossein‐Zadeh¹

2012

SPIE Proceedings

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The quest for low power and high frequency electro-optical modulator has been one of the important endeavors in microwave photonics. The advent of microdisk electro-optic modulator created a new domain in optical modulator and photonic microwave receiver design by exploiting the unique properties of high quality (high-Q) Whispering-Gallery Mode (WGM) optical cavities. High-Q crystalline WG cavities were the first devices used as compact and low power resonant electro-optical modulators and gradually semiconductor and polymer based microdisk and microring modulators emerged from this core technology. Due to its small size, high sensitivity and limited bandwidth, originally microdisk modulator was developed with the objective of replacing the conventional microwave wireless receiver frontend with a sensitive photonic front-end. Later it was shown that the electro-optic microdisk modulator could also function as a microwave frequency mixer in optical domain. Starting from fundamentals of resonant electro-optic modulation in high-Q WGM cavities, in this paper we review the development of high sensitivity microdisk modulators and the recent progress toward more efficient modulation at higher frequencies. Next related topics such as singlesideband modulation, all-dielectric photonic receiver, and semiconductor microring modulators are briefly discussed. Finally, photonic microwave receiver configurations that employ high-Q optical resonance for modulation, filtering and mixing are presented. We will show that high-Q optical resonance is one of the promising routes toward the general idea of an all-optical microwave receiver free of high frequency electronic transistors, mixers and filters.

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InP-Based Mach–Zehnder Modulator With Capacitively Loaded Traveling-Wave Electrodes

Cited by 22 publications

References 14 publications

Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator

Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp

Photonic microwave receivers based on high-Q optical resonance

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