Innovative T/R module in state-of-the-art GaN technology

Bettidi, A.; Calori, M.; Cetronio, A.; Cicolani, M.; Costrini, C.; Lanzieri, C.; Maccaroni, S.; Marescialli, L.; Peroni, M.

doi:10.1109/radar.2008.4720975

Cited by 14 publications

(5 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a significant LNA figure of merit, [12], we have evaluated the dissipated power in CW condition obtaining 0.6 W and 1 W for V DS = 10 V and V DS = 15 V, respectively.…”

Section: Gan-lna Performancementioning

confidence: 99%

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

Crispoldi

Pantellini

Lavanga

et al. 2010

Int. J. Microw. Wireless Technol.

View full text Add to dashboard Cite

Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

show abstract

“…As a significant LNA figure of merit, [12], we have evaluated the dissipated power in CW condition obtaining 0.6 W and 1 W for V DS = 10 V and V DS = 15 V, respectively.…”

Section: Gan-lna Performancementioning

confidence: 99%

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

Crispoldi

Pantellini

Lavanga

et al. 2010

Int. J. Microw. Wireless Technol.

View full text Add to dashboard Cite

show abstract

“…Having the T/R module functionalities exploited by MMIC dies allows a terrific reduction of the module size and weight, with the chance of increasing the overall number of T/R modules per antenna. In the literature, there are many contributions to the subject where GaN MMICs replace traditional GaAs functionalities aiming at implementing future generation X-band GaN-based T/R modules [6]- [11].…”

Section: Introductionmentioning

confidence: 99%

A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends

D'Angelo¹,

Biondi²,

Scappaviva³

et al. 2016

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

View full text Add to dashboard Cite

A set of monolithic microwave integrated circuits (MMICs) has been successfully developed by using a qualified European GaN HEMT technology. In particular a high power amplifier (HPA), a low noise amplifier (LNA) and a single pole double throw (SPDT) switch have been designed, manufactured and tested. The presented chipset is very suitable for integration in future GaN-based T/R module Frontend for spaceborne Xband SAR applications. In particular, the MMIC HPA integrates two stages of gain in 5.5 x 4.0 mm2 of area. Its measured performance is an output power of 27 W, a PAE of 36% with a linear gain greater than 24 dB from 8.8 GHz to 10.2 GHz. The MMIC LNA integrates three stages of gain in 3.0 x 2.02 mm2 of area. Its measured performance is a small signal gain greater than 23 dB with an associated noise figure of 1.6 dB in the frequency range from 7.4 to 11.4 GHz. Besides, its output power at 1 dB of gain compression is greater than 22 dBm. The MMIC SPDT switch exploits a robust asymmetrical absorptive/reflective topology in 3.0 x 1.0 mm2 of area. The chosen topology allows obtaining different functionalities of each switched branch. In the frequency range from 8.4 GHz to 10.8 GHz its measured performance is an insertion loss lower than 1 dB for both tx and rx path, and tx-mode rx-mode isolations better than 20 dB and 28 dB respectively. Besides, the tx path 1 dB insertion loss compression occurs at nearly 20 W of input power.Index Terms-GaN; low noise amplifier; power amplifier; SPDT switch; X band; T/R module

show abstract

“…These attractive features encourage transition to implemented Transmit/Receive (TR) modules with GaN technology. In [12][13][14], evidence of the GaN TR module performance has been demonstrated, and this significant performance may lead to integration at system level or system on chip (SoC). There is, however, a lack of research in fully-integrated, high performance GaN TR modules with a miniaturized antenna on the same material, silicon.…”

Section: Introductionmentioning

confidence: 99%

Silicon CPW Fed Slotted Antenna for Realization of Integrated Sar System Front-End

Jamil¹,

Azemi²

2016

PIER C

View full text Add to dashboard Cite

Abstract-This paper investigates the design of a small antenna on a silicon substrate. The antenna on silicon substrate will be used for integration in a silicon-based GaN TR module. This Co-Planar Waveguide (CPW)-fed antenna has been successfully miniaturized up to λ/4 about 20% reductions by adding a slot to the patch antenna. Promising results are obtained from the antenna simulation and measurement. From the measurement result, the antenna bandwidth is 45% (4.8 GHz-7.5 GHz) with measured gain about 2.5 dBi over frequency range of 5 GHz-7.4 GHz.

show abstract

Innovative T/R module in state-of-the-art GaN technology

Cited by 14 publications

References 6 publications

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends

Silicon CPW Fed Slotted Antenna for Realization of Integrated Sar System Front-End

Contact Info

Product

Resources

About