A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends

Abstract

A set of monolithic microwave integrated circuits (MMICs) has been successfully developed by using a qualified European GaN HEMT technology. In particular a high power amplifier (HPA), a low noise amplifier (LNA) and a single pole double throw (SPDT) switch have been designed, manufactured and tested. The presented chipset is very suitable for integration in future GaN-based T/R module Frontend for spaceborne Xband SAR applications. In particular, the MMIC HPA integrates two stages of gain in 5.5 x 4.0 mm2 of area. Its measured performance is an output power of 27 W, a PAE of 36% with a linear gain greater than 24 dB from 8.8 GHz to 10.2 GHz. The MMIC LNA integrates three stages of gain in 3.0 x 2.02 mm2 of area. Its measured performance is a small signal gain greater than 23 dB with an associated noise figure of 1.6 dB in the frequency range from 7.4 to 11.4 GHz. Besides, its output power at 1 dB of gain compression is greater than 22 dBm. The MMIC SPDT switch exploits a robust asymmetrical absorptive/reflective topology in 3.0 x 1.0 mm2 of area. The chosen topology allows obtaining different functionalities of each switched branch. In the frequency range from 8.4 GHz to 10.8 GHz its measured performance is an insertion loss lower than 1 dB for both tx and rx path, and tx-mode rx-mode isolations better than 20 dB and 28 dB respectively. Besides, the tx path 1 dB insertion loss compression occurs at nearly 20 W of input power.Index Terms-GaN; low noise amplifier; power amplifier; SPDT switch; X band; T/R module

Electromagnetic interference shielding in X-band with aero-GaN

“…We point out that the aero-GaN samples are able to cover an entire monolithic microwave integrated circuit (MMIC), which has overall dimensions smaller than or comparable to our samples, depending on its application and output power. For example, our aero-GaN samples have the area of 288 mm 2 , while the surface of an advanced MMIC T/R module, dedicated to space borne radar in the X-band and made of two stages power amplifier, three-stage low noise amplifier and MMIC SPDT switches, has a total area of 230 mm 2 [23].…”

X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology

“…The characteristic impedance is calculated and tuned deliberately with the Momentum EM simulation in ADS. In previous works, several k-Ohm resistors were used to decouple the switch circuit from the common gate ground [ 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. However, the gate leakage current combined with a high-value resistor induces a distinctive change to the effective control voltage, which can result in a huge degradation in the overall performance of the switch, specifically for the on-state HEMT as it can change state from on- to off-state.…”

Robust Ku-Band GaN Low-Noise Amplifier MMIC

“…While GaAs pseudomorphic HEMTs (pHEMTs), characterized by low operating voltage, high electron mobility, and high maximum operating frequency, are actively used in transceiver modules, they require the application of additional limiters to block leaked power from the transmitter and to protect the receiver circuit from unwanted highinput power, which adversely affects both the size reduction of the module and the necessary low-noise performance. This drawback has contributed to a recent research trend focused on using GaN HEMTs on SiC in the receiver module [3][4][5][6][7][8].…”