Innovative PCM+OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance

Navarro, G.; Verdy, Anthonin; Castellani, N.; Bourgeois, G.; Sousa, V.; Molas, G.; Bernard, M.; Sabbione, C.; Noé, Pierre; Garrione, J.; Fellouh, L.; Perniola, L.

doi:10.23919/vlsit.2017.7998208

Cited by 34 publications

(16 citation statements)

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“…[23] We compared the ON current density ( J ON ) of the GeS selector with those of the previously reported Se-and Te-based selectors, as summarized in Figure 5. [23,30,[34][35][36][37][38][39] The GeS device shows a much higher J ON at the same device size. The high J ON of GeS OTS suggests the possibility of programming PCM cells.…”

Section: Doi: 101002/pssr202100084mentioning

confidence: 99%

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Jia

Liu

et al. 2021

Physica Rapid Research Ltrs

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A two‐terminal selector is an essential element for high‐density 3D stackable memory arrays. Suppressing sneak current, the device also needs to provide extremely high current density to melt‐quench the storage layer in phase‐change memory (PCM). Recently, an ovonic threshold switching (OTS) selector based on amorphous GeS demonstrated a large current density, which seems to be promising for 3D stackable PCM application. Herein, the scalability of GeS OTS selectors is investigated as the device scales down from 200 to 60 nm. Interestingly, the ON/OFF current, threshold voltage, and switching speed hardly change as the device scales down, whereas the ON current density exponentially grows. A large current density, ≈35.4 MA cm−2, is achieved in 60 nm‐sized devices. The high current density endows the GeS selector with great potential for use in high‐density 3D stackable memory applications.

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Section: Doi: 101002/pssr202100084mentioning

confidence: 99%

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Jia

Liu

et al. 2021

Physica Rapid Research Ltrs

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“…GeSe is frequently used for OTS device fabrication. [119][120][121] Yoo et al fabricated GeSe-based OTS devices. The fabricated cell exhibited excellent endurance properties with low threshold voltages.…”

Section: Bipolar 1s1rmentioning

confidence: 99%

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Dongale

Kamble

Kang

et al. 2021

Physica Rapid Research Ltrs

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The recent progress of selector and self-rectifying devices for resistive randomaccess memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak-path current issue, and possible solutions is discussed. The parameters and requirements of selector devices are elucidated here, and several types of selector devices, such as a transistor-assisted transistor-one resistor, unipolar one diode-one resistor, bipolar one selector-one resistor, and threshold switching selectors, are comprehensively discussed. In the case of self-rectifying devices, the recent progress in complementary RS devices, vacancy-modulated conductive oxide-based devices, and tunneling barrier-based RS devices is reviewed. The switching mechanisms and the geometrical configuration of the selector and self-rectifying RS devices are emphasized. Furthermore, comparative assessments of the different devices are evaluated. Finally, an overview of the gaps in previously reported devices is presented and some key improvements for future research direction suggested.

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“…Instead of optimizing the OTS part and its threshold behavior, the 1R part is structurally reconfigured here. Differing from a current scheme that covers the 1R region of the phase change materials [22], [23] using a planar electrode layer above, our scheme rearranges the middle electrode to enwrap the 1R region, shown in Fig. 1(b).…”

Section: Scheme and Analysis Modelmentioning

confidence: 99%

Phase Change Memory Cell With Reconfigured Electrode for Lower RESET Voltage

Zhou

Chen

et al. 2019

IEEE J. Electron Devices Soc.

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To reduce the reset voltage and thus leakage current of the cross-point architecture of phase change memory (PCM), a type of 1S1R cell hierarchy with reconfigured electrode capping around the phase change material is explored in this paper. The electro-thermal behavior during the RESET phase transition is mimicked using a finite element model. Results indicate that the temperature distribution, potential drop and current density across the active region can be reshaped. Especially, the process of temperature evolution for phase transition is accelerated and thus the PCM cell can be reset under a lower voltage, e.g., from 2.2 V to 1.2 V for our typical configuration with a GST width of 40 nm and heater width of 20 nm. As a result, the lower RESET voltage decreases the leakage current and power consumption, potentially leading to an increased integration level for cross-point PCM.INDEX TERMS Phase change memory (PCM), cross-point structure, reset voltage, capping electrode.

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Innovative PCM+OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance

Cited by 34 publications

References 0 publications

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Phase Change Memory Cell With Reconfigured Electrode for Lower RESET Voltage

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