Innovative architecture for dual-band WLAN and MIMO frontend module based on a single pole, three throw switch-plexer

Highly linear 4.9-5.9 GHz WLAN front-end module based on SiGe BiCMOS and SOI

“…4, two multi-gate SOI switch FET's are used to construct both series and shunt paths in a switch path to minimize insertion loss and maximize high isolation at high frequency. The linearity of a series-shunt switch path is usually constrained by that of the shunt path FET's [4]. Consequently, the maximum transmit can be calculated by equation (1) (1) where Zo is the characteristic impedance of the measurement system, Vgs is the control voltage difference between the gate and source (or drain), Vth is the threshold voltage of the switch FET, and n is the number of cascaded switch FET.…”

“…Consequently, the maximum transmit can be calculated by equation (1) (1) where Zo is the characteristic impedance of the measurement system, Vgs is the control voltage difference between the gate and source (or drain), Vth is the threshold voltage of the switch FET, and n is the number of cascaded switch FET. When the parasitic capacitance of multiple stacked FET's in a shunt path is well designed and balanced, the RF voltage swing will be evenly distributed across each drain-source junction in the stacked FET's [4]. Therefore, the maximum transmission power can be predicted using equation (1).…”

“RF-SoC”: Integration Trends of On-Chip CMOS Power Amplifier: Benefits of External PA versus Integrated PA for Portable Wireless Communications

“…The benefits of using Si-based external PAs that leverage BiCMOS capability are beginning to be apparent. A recent paper reports an innovative architecture for a dual-band front-end module (FEM) for WiFi and MIMO radios, which consists of a dual-band SiGe PA and a SP3T switchplexer (the SP3T switch-plexer has a SP3T switch and an integrated RX diplexer) [17]. The TX switch paths show 0.1 dB compression at >33.5 dBm with <1 dB insertion loss (IL) along with >18 dB isolation.…”