Highly linear 4.9-5.9 GHz WLAN front-end module based on SiGe BiCMOS and SOI

Abstract

A high linearity 4.9-5.9 GHz T/R FEM is presented. The FEM consists of a SiGe BiCMOS PA and a singlepole double-throw SOI switched LNA in a 3 x 3 x 0.6 mm QFN package. The Tx chain has > 31 dB gain and meets 3% EVM up to 22 dBm with harmonic and out-of-band emissions compliant to regulatory limits. The receive chain features 2 dB NF and 14 dB gain with -3 dBm IP1dB for LNA mode and 4.5 dB attenuation in bypass mode with 10 dBm IP1dB. All these features simplify the front-end circuit designs of complex WLAN/MIMO radios.Index Terms -WLAN power amplifier, dual-band PA, dualband front-end module.