InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Aderhold, J.; Davydov, V. Yu.; Fedler, F.; Klausing, H.; Mistele, D.; Rotter, Thomas; Semchinova, O.; Stemmer, J.; Graul, J.

doi:10.1016/s0022-0248(00)00986-6

Cited by 121 publications

(37 citation statements)

References 5 publications

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“…Device structures based on (Ga 1-y-x Al y In x )N heterostructures and related alloys will for example enable the fabrication of high-efficiency, monolithic integrated energy conversion systems (multi-tandem solar cells & solid state lighting) and high speed optoelectronics for optical communication systems. At present, the growth of III-nitrides is mostly performed using low-pressure deposition techniques such as molecular beam epitaxy (MBE) [1][2][3] organometallic chemical vapor deposition (OMCVD -also denoted as MOVPE) [4,5] or variations of both. However, low-pressure deposition processes are limited to regimes where the partial pressures of the constituents do not differ vastly and the decomposition process can be countered by off-equilibrium processing conditions.…”

Section: Introductionmentioning

confidence: 99%

The characterization of InN growth under high‐pressure CVD conditions

Dietz¹,

Alevli²,

Woods³

et al. 2005

Physica Status Solidi (b)

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Gaining insight into the gas phase and surface chemistry processes that govern the growth of InN and indium-rich group III-nitrides alloys is of crucial importance for understanding and controlling their materials properties. High-pressure chemical vapor deposition (HPCVD) has been shown to be a valuable method for achieving this goal. First results show that InN layers can be grown under HPCVD conditions at 850 -900 °C in the laminar flow regime of the HPCVD reactor at pressures around 15 bar and ammonia to TMI precursor flow ratio below 200. This is a major step towards the growth of indium rich group III-nitride heterostructures due to the close processing windows. The ex situ InN layers analysis shows that the absorption edge in the InN depends strongly on the precursor flow ratio, indicating that the debated InN properties are strongly influenced by the indium-to-nitrogen stoichiometry. By controlling the InN point defect chemistry we showed that the absorption edge shifts from 1.8 eV down to 0.7 eV. The results show a close relation between absorption edge shift in InN and In -N stoichiometry. In order to study the growth under high-pressure CVD conditions, real-time optical characterization techniques have been developed and applied to analyze gas phase constituents as well as the film nucleation and steady state growth at elevated pressures. Principal angle reflection and laser light scattering are employed to study surface chemistry processes at a sub-monolayer level, showing their superiority in optimizing and controlling the growth process.

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Section: Introductionmentioning

confidence: 99%

The characterization of InN growth under high‐pressure CVD conditions

Dietz¹,

Alevli²,

Woods³

et al. 2005

Physica Status Solidi (b)

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“…Single-crystalline n-InN epilayers were grown on sapphire substrates by metalorganic chemical vapor deposition [3] (sample 1) and metalorganic molecular-beam epitaxy [4] (samples 2, 3, 4) techniques. A set of In x Ga 1--x N alloys (0.36 < x < 1) was grown by plasma-assisted molecularbeam epitaxy under the conditions similar to those for InN [5].…”

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confidence: 99%

Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

Davydov

Klochikhin

Емцев

et al. 2002

phys. stat. sol. (b)

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297

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“…Characterization of Samples Undoped InN epilayers were grown on (0001) sapphire substrates by different epitaxy methods [6][7][8]. A set of In x Ga 1--x N layers (0.36 < x < 1) was grown by plasma assisted molecular beam epitaxy [3].…”

mentioning

confidence: 99%