Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 &lt; x &lt; 1)

Davydov, V. Yu.; Klochikhin, A. A.; Емцев, В. В.; Иванов, С. В.; Vekshin, V. V.; Bechstedt, F.; Furthmüller, J.; Harima, Hiroshi; Мудрый, А. В.; Hashimoto, Akihiro; Yamamoto, Akio; Aderhold, J.; Graul, J.; Häller, E. E.

doi:10.1002/1521-3951(200204)230:2<r4::aid-pssb99994>3.0.co;2-z

Cited by 297 publications

(103 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[37], using a band gap of 0.67 eV [35,36] as well as effective hole and electron masses of 0.5 and 0.11 m e , respectively [38]. The extrinsic pinning centers at the InN surface due to steps are modeled as a half-filled Gaussian distribution, being energetically located 0.27 eV below the conduction band edge (FWHM = 0.1 eV).…”

Section: B Electronic Propertiessupporting

confidence: 89%

See 1 more Smart Citation

Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

View full text Add to dashboard Cite

Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (1010) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

show abstract

Section: B Electronic Propertiessupporting

confidence: 89%

“…Thus, the band gap equals the measured voltage range without tunnel current times the electron charge, i.e., ∼0.7 eV. This agrees well with the bulk band gap of InN [35,36] and is further confirmed by our PL results.…”

Section: B Electronic Propertiesmentioning

confidence: 99%

Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

View full text Add to dashboard Cite

show abstract

“…(zinc blende) or 0.71 eV (wurtzite) in extremely good agreement with measured values [53,57,[68][69][70][71]. In general, the improvement results from the good performance of the HSE03 starting point for materials that comprise d-electrons such as GaAs, CdS, GaN, ZnO, and ZnS, for which the mean absolute relative error of the HSE03 + 0 0 G W gaps is calculated to be 7.9%, while it is about 12.2% in the GGA + 0 0 G W approach.…”

Section: Quasiparticle Shiftsmentioning

confidence: 99%

Ab‐initio theory of semiconductor band structures: New developments and progress

Bechstedt

Fuchs

Kresse

2009

Physica Status Solidi (b)

Self Cite

124

View full text Add to dashboard Cite

Organic fluorescent molecules are infiltrated in the channels of zeolite L nanocrystals, thus creating organic–inorganic fluorescent nanoparticles. Combined with dielectric matrices, these fluorescent nanopigments open the way to the realization of novel optical devices. In this paper, the optical measurement of the quantum yield of fluorescent zeolites by means of a precise and reliable diffuse reflectance technique is presented. Several possible factors that may affect the fluorescence quantum yield are also investigated.

show abstract

“…[17][18][19] Recent photoluminescence studies indicate the band gap of InN may be as small as 0.7-0.8 eV. [20][21][22] Depending on the value chosen for the band gap in Eq. ͑2͒, the surface barrier height of Au on annealed InN could either be considered to be essentially zero or 1.2Ϯ0.1 eV.…”

mentioning

confidence: 99%

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Rickert

Ellis

Himpsel

et al. 2003

Applied Physics Letters

View full text Add to dashboard Cite

The effects of surface chemical treatments and metal deposition on the InN surface are studied via synchrotron-based photoemission spectroscopy. Changes in the In 4d core level as well as the valence band spectra are reported. The surface Fermi level position, E F , relative to the valence band maximum was determined for both Au and Ti Schottky barriers. E F lies at an energy of 0.7 eV above the valence band maximum for Au deposited on annealed InN and 1.2 eV above the valence band maximum for Ti deposited on Ar-sputtered InN. These results that the surface Fermi level lays at or above the conduction band maximum when a value of InN band gap of 0.7-0.9 eV is assumed.

show abstract

Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

Cited by 297 publications

References 9 publications

Intrinsic electronic properties of high-quality wurtzite InN

Intrinsic electronic properties of high-quality wurtzite InN

Ab‐initio theory of semiconductor band structures: New developments and progress

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Contact Info

Product

Resources

About