Inkjet Printing of Liquid Silicon

Masuda, Takashi; Nakayama, Maui; Saito, Kimihiko; Katayama, Hirotaka; Terakawa, Akira

doi:10.1002/marc.202000362

Cited by 11 publications

(7 citation statements)

References 22 publications

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“…As a result, several low-temperature methods for crystalline Si synthesis have been explored for the past two decades. For example, annealing of molecular Si inks − and metal-induced crystallization of amorphous Si , have been reported. A key issue with these methods is that the product Si is necessarily polycrystalline.…”

Section: Introductionmentioning

confidence: 99%

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

et al. 2022

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Epitaxial films of Si have been prepared at room temperature by electrochemical liquid phase epitaxy (ec-LPE). Crystalline Si films were grown on both Si(111) and Si(100) substrates, demonstrating clear evidence of low-temperature homoepitaxy. The ec-LPE method was demonstrated as a hybrid approach that combined elements of conventional electrodeposition and traditional liquid phase epitaxy. Voltammetric and amperometric data were collected that indicated conditions where Si ec-LPE is possible with SiCl 4 in propylene carbonate electrolyte and eutectic gallium indium (e-GaIn) thin-film electrodes. Scanning electron micrographs, scanning transmission electron micrographs, and electron and X-ray diffraction data demonstrated that epitaxy extended throughout films that were several microns in thickness. Raman spectra, high-resolution X-ray diffraction data, time-of-flight secondary ion mass spectrometry, and energy-dispersive elemental mapping indicated that the asprepared films were uniformly hyperdoped with Ga at >10 at %. These cumulative results demonstrate a distinct new way to realize crystalline Si films suitable for optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

et al. 2022

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“…It should be noted that the depositions obtained herein were a-Si. Generally, a-Si obtained from liq-Si is converted into crystalline Si by additional energy such as laser or heating [2,17,18]. Therefore, it is necessary to evaluate the effect of stronger doses on the crystallinity of Si in the LP-EBID process in the future.…”

Section: Resultsmentioning

confidence: 99%

Direct writing of silicon nanostructures using liquid-phase electron beam induced deposition of hydrosilanes

Masuda¹,

Mori²

2021

Nanotechnology

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Solid Si (wafer) and gaseous Si (silane) are generally used as starting materials for fabricating Si devices. In this study, a liquid precursor (liquid-phase hydrosilane) for semiconducting Si, called liquid Si (liq-Si), was synthesized to establish a liquid pathway for fabricating Si. Although the liquid-to-solid Si conversion can be induced by heating at 400 °C, conversion without heating was realized herein by electron-beam (EB) irradiation. This study is the first to irradiate liq-Si with EB. Size-controllable Si nanodots, with diameters of the order of 100 nm, were directly deposited at any point by liquid-phase electron-beam-induced deposition (LP-EBID) with a beam diameter of 50 nm. This approach yielded less-contaminated deposits at the detection limit of energy-dispersive x-ray spectroscopy, as opposed to typical EBID, wherein carbon impurities up to 90% are found. The processing resolution of LP-EBID is potentially 1 nm or less. Therefore, this non-heating deposition technique realizes the direct writing of Si nanostructures and would be a powerful tool for Si nanofabrication.

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“…This can be achieved by introducing boron or phosphorus compounds. Another conceivable possibility is the addition of silicon‐phosphorus or silicon‐boron compounds to the liquid silane [14–16] . The incorporation of the hetero atoms into the silicon lattice takes place during the polymer formation, followed by further annealing to yield doped amorphous or crystalline silicon.…”

Section: Introductionmentioning

confidence: 99%

Linear Phenylsilanes with PSi₄P, PSi₅P, and Si₇ Backbones

2022

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Linear α,ω‐diphosphaoligosilanes were prepared starting from 1,5‐dilithiodecaphenyl‐n‐pentasilane, Li(SiPh2)5Li, and chlorodiorganophosphanes. The compounds 1,5‐bis(diphenylphosphanyl)decaphenyl‐n‐pentasilane, (Ph2P)Si5Ph10(PPh2), 1,5‐bis(di‐iso‐propylphosphanyl)decaphenyl‐n‐pentasilane, (iPr2P)Si5Ph10(PiPr2), and 1,4‐bis(di‐iso‐propylphosphanyl)octaphenyl‐n‐tetrasilane, (iPr2P)Si4Ph8(PiPr2), were obtained in moderate to good yields and characterized with IR‐, Raman‐, UV‐, 31P‐, 29Si‐, and 1H‐NMR spectroscopy. Single crystal structure analyses of these three silanes show all‐transoid conformations of the atoms along the phosphorus‐silicon backbone of the molecules in the solid state. The silicon‐silicon and the silicon‐phosphorus‐bonds are elongated. This is caused by the complete substitution of these molecules by sterically demanding phenyl‐ and i‐propyl‐substituents and effective σ‐conjugation along the main chains. Hexadecaphenyl‐n‐heptasilane, Si7Ph16, was prepared for comparison with the other three compounds. The latter one shows a long wavelength UV‐absorption in the same region as 1,5‐bis(diphenylphosphanyl)decaphenyl‐n‐pentasilane.

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Inkjet Printing of Liquid Silicon

Cited by 11 publications

References 22 publications

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

Direct writing of silicon nanostructures using liquid-phase electron beam induced deposition of hydrosilanes

Linear Phenylsilanes with PSi₄P, PSi₅P, and Si₇ Backbones

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Inkjet Printing of Liquid Silicon

Cited by 11 publications

References 22 publications

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

Direct writing of silicon nanostructures using liquid-phase electron beam induced deposition of hydrosilanes

Linear Phenylsilanes with PSi4P, PSi5P, and Si7 Backbones

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Linear Phenylsilanes with PSi₄P, PSi₅P, and Si₇ Backbones