Inkjet Printed HfO<sub>2</sub>-Based ReRAMs: First Demonstration and Performance Characterization

Vescio, Giovanni; Crespo-Yepes, A.; Alonso, Daniel F.; Claramunt, S.; Porti, M.; Rodrı́guez, R.; Cornet, A.; Cirera, A.; Nafría, M.; Aymerich, X.

doi:10.1109/led.2017.2668599

Cited by 27 publications

(18 citation statements)

References 29 publications

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“…The large E g means that the Fermi level ( E F ) is approximately close to the middle of E g , i.e., E C − E F = E g /2. Resistance switching in dielectric films has been extensively investigated recently, and Ohmic conduction often observed in low resistance states in memory devices. The large mass of ions, and requirement of amorphous dielectric in CMOS technology means ionic conduction, and grain boundary limited conduction mechanisms are usually not important for practical applications and therefore are not discussed in detail.…”

Section: Basics and Theory Of Oxide High κ Dielectricsmentioning

confidence: 99%

“…High κ dielectrics are being widely used in numerous applications. In addition to their main function as insulating layer for transistors, they also play key roles in fabricating memory, capacitors, energy storage, and high frequency modulation for telecommunication devices . These high κ dielectrics are commonly divided into five categories: ferroelectric polymer, electrolyte, self‐assembled molecular (SAM), organic–inorganic hybrid material, and inorganic metal oxide.…”

Section: Introductionmentioning

confidence: 99%

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Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

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Section: Basics and Theory Of Oxide High κ Dielectricsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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“…Various initiation sources such as furnace [219,223] or oven, [184,190,224] rapid thermal annealing (RTA), [131,140,202,204,225,226] microwave, [119,122,124,227] ultraviolet (UV) photochemical activation (lamp [118,174,198,228] and laser [229] ), and hotplate [98,185] have been used for the solution-based metal oxides films' conversion for RRAM devices. From these, the most common initiation sources are based on conventional thermal annealing (CTA), like furnace/oven and hotplate annealing.…”

Section: Thermal and Irradiation Annealing Treatment For Film Conversionmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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“…29,30 But, transforming them into printable inks is challenging as it involves many additives and formulation procedures to form stable suspension. [31][32][33][34] HfO 2 ink for RRAM fabrication is commercially available, 35 but very little option exists for other materials. Another alternative to obtain inkjet printed metal oxide dielectric layers is to post-anneal a printed metal layer in an oxidizing environment, which requires an additional etching step to reveal the metal contact underneath the oxidized layer.…”

Section: Introductionmentioning

confidence: 99%

Electrically-generated memristor based on inkjet printed silver nanoparticles

et al. 2019

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Inkjet Printed HfO₂-Based ReRAMs: First Demonstration and Performance Characterization

Cited by 27 publications

References 29 publications

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Electrically-generated memristor based on inkjet printed silver nanoparticles

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Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization

Cited by 27 publications

References 29 publications

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Electrically-generated memristor based on inkjet printed silver nanoparticles

Contact Info

Product

Resources

About

Inkjet Printed HfO₂-Based ReRAMs: First Demonstration and Performance Characterization