Inkjet‐Assisted Nanotransfer Printing for Large‐Scale Integrated Nanopatterns of Various Single‐Crystal Organic Materials

Abstract

Inkjet-assisted nanotransfer printing (inkjet-NTP) facilitates spatial control of many arrays of various organic functional materials on a single substrate with a high-throughput integration process, enabling monolithic integration of various organic nanopatterns. Inkjet-NTP enables wafer-scale organic electronic circuits composed of field-effect transistors, complementary inverters, and p-n diodes, demonstrating its capability to produce a high-performance, multifunctional organic chip.

Precise Patterning of Organic Single Crystals via Capillary‐Assisted Alternating‐Electric Field

“…However, these methods were still limited by relatively low patterning resolution and efficiency. For instance, due to the size limitation of ink droplet and printer nozzle, the resolution for the inkjet printing method is usually limited to be several tens of micrometers . In addition, the requirements of one‐step growth and patterning set a limitation to the material types and pattern structures of the organic micro/nanocrystals.…”

Patterned Arrays of Functional Lateral Heterostructures via Sequential Template‐Directed Printing

“…Interactions between the functional materials and regular solution features in their microliquid environment govern the formation of the structures . Precise manipulation of multiphase flows during the micropatterning process is essential for heterogeneous integration of various functional materials . This requires a reliable strategy to achieve microscale heterostructures by regulating liquid flows and interfaces, particularly for dots and lines due to their key role in building miniaturized and integrated operating systems …”

Observation of Charge Separation and Space‐Charge Region in Single‐Crystal P3HT/C60 Heterojunction Nanowires

“…[23] Poly(3-hexylthiophene-2,5-diyl) (P3HT) and fullerene (C 60 )a re used as the p-type and n-type semiconducting materials,respectively.The resulting P3HT/C 60 heterojunction nanowire devices were amenable to scanning photocurrent microscopy (SPCM) analysis, which allowed observation of apparent charge separation at the p-n junction and measurements of depletion width under various bias voltages.T oour knowledge,this is the first direct observation of charge separation and depletion region formation in single-crystal organic p-n junctions. [23] Poly(3-hexylthiophene-2,5-diyl) (P3HT) and fullerene (C 60 )a re used as the p-type and n-type semiconducting materials,respectively.The resulting P3HT/C 60 heterojunction nanowire devices were amenable to scanning photocurrent microscopy (SPCM) analysis, which allowed observation of apparent charge separation at the p-n junction and measurements of depletion width under various bias voltages.T oour knowledge,this is the first direct observation of charge separation and depletion region formation in single-crystal organic p-n junctions.…”

“…Herein we fabricated an organic axial p-n heterojunction nanowire containing p-type and n-type organic single-crystal semiconductors and having awell-defined planar junction, by means of ar ecently developed inkjet-assisted nanotransfer printing (inkjet-NTP) technique. [23] Poly(3-hexylthiophene-2,5-diyl) (P3HT) and fullerene (C 60 )a re used as the p-type and n-type semiconducting materials,respectively.The resulting P3HT/C 60 heterojunction nanowire devices were amenable to scanning photocurrent microscopy (SPCM) analysis, which allowed observation of apparent charge separation at the p-n junction and measurements of depletion width under various bias voltages.T oour knowledge,this is the first direct observation of charge separation and depletion region formation in single-crystal organic p-n junctions.…”

“…Figure 1s chematically illustrates the fabrication of an axial p-n heterojunction based on P3HT and C 60 crystalline nanowires by means of the simple Inkjet-NTP process. [23] First, ap attern of nanoscale lines is fabricated on as ilicon wafer by means of e-beam lithography;e ach line is 100 nm wide and 200 nm tall, and adjacent lines are spaced 3 mm apart. An egative mold of these lines is fabricated by casting polyurethane acrylate (PUA) onto the pattern.…”