Ink-jet printed p-type polymer electronics based on liquid-crystalline polymer semiconductors

Baklar, Mohammed A.; Wöbkenberg, Paul H.; Sparrowe, David; Gonçalves, Magda; McCulloch, Iain; Heeney, Martin; Anthopoulos, Thomas D.; Stingelin, Natalie

doi:10.1039/b918472d

Cited by 39 publications

(30 citation statements)

References 25 publications

(23 reference statements)

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“…Higher mobilities (up to 0.1 cm 2 V −1 s −1 ) were reached by Baklar et al with another polythiophene derivative, namely, the poly(2,5‐bis(3‐alkylthiophen‐2‐yl)‐thieno[3,2‐b]thiophene) (pBTTT) dissolved in 1,2,4‐trichlorobenzene.…”

Section: Functional Inks For Inkjet‐printingmentioning

confidence: 97%

“…Inkjet‐printing of TIPS‐pentacene at room temperature is also reported . Thiophene‐based semiconductors are normally printed at room temperature or on slightly heated substrates (temperatures up to 50 °C) . On such semiconductors, no postdeposition treatments are usually reported, even if in a few cases annealing at 120 °C in inert atmosphere was done to remove residual solvents and relax the polymer chains in the film.…”

Section: Functional Inks For Inkjet‐printingmentioning

confidence: 99%

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Inkjet‐Printing: A New Fabrication Technology for Organic Transistors

Mattana

Loi

Woytasik

et al. 2017

Adv Materials Technologies

120

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Inkjet-printing is one of the most important fabrication techniques in the field of printed electronics. Its main advantages include the possibility of fabricating, at ambient conditions and by employing a digital layout, a large variety of electronic devices on different types of substrates, including flexible plastic ones. In this paper, the utilization of inkjet-printing as an important fabrication tool for the realization of organic transistors and circuits/sensing systems based on such type of transistors is reviewed. The most important aspects of the fabrication process, including ink formulation, printing deposition, and postprinting treatment, are described in detail. The most significant examples of inkjet-printed organic transistors of different types (field-effect, electrolytegated, and electrochemical) are presented and finally an overview of their applications as building blocks of more complex electronic circuits and systems for the detection and quantification of specific measurands is provided.

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Section: Functional Inks For Inkjet‐printingmentioning

confidence: 97%

Section: Functional Inks For Inkjet‐printingmentioning

confidence: 99%

Inkjet‐Printing: A New Fabrication Technology for Organic Transistors

Mattana

Loi

Woytasik

et al. 2017

Adv Materials Technologies

120

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“…The pBTTT polymer is known for its excellent charge mobility in eld effect transistor devices. [31][32][33] Even if they yield moderate efficiency in solar cells, pBTTT:fullerene blends are particularly suitable model systems to study microstructural effects. 22 Indeed, it has been shown that the fullerene molecules intercalate between the side-chains of ordered polymer domains, forming a well-dened co-crystalline phase, while excess fullerenes aggregate into relatively phase-pure clusters.…”

Section: Introductionmentioning

confidence: 99%

The influence of microstructure on charge separation dynamics in organic bulk heterojunction materials for solar cell applications

et al. 2014

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Light-induced charge formation is essential for the generation of photocurrent in organic solar cells. In order to gain a better understanding of this complex process, we have investigated the femtosecond dynamics of charge separation upon selective excitation of either the fullerene or the polymer in different bulk heterojunction blends with well-characterized microstructure. Blends of the pBTTT and PBDTTPD polymers with PCBM gave us access to three different scenarios: either a single intermixed phase, an intermixed phase with additional pure PCBM clusters, or a three-phase microstructure of pure polymer aggregates, pure fullerene clusters and intermixed regions. We found that ultrafast charge separation (by electron or hole transfer) occurs predominantly in intermixed regions, while charges are generated more slowly from excitons in pure domains that require diffusion to a charge generation site.The pure domains are helpful to prevent geminate charge recombination, but they must be sufficiently small not to become exciton traps. By varying the polymer packing, backbone planarity and chain length, we have shown that exciton diffusion out of small polymer aggregates in the highly efficient PBDTTPD:PCBM blend occurs within the same chain and is helped by delocalization.

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“…Furthermore, organic devices are lightweight, which is especially suitable for mobile applications. In addition, evaporation [10], spin coating [11], solution processing [12], and inkjet printing technology [13]- [16] are feasible to realize organic electronic devices. OTFT is a key member in the family of organic electronic devices, and it could be applied to large-area flat-panel displays [17], radio frequency identification card (RF-ID) [18], [19], electronic paper, electronic textile [20], sensors [21]- [24], and so on.…”

Section: Improved Performance Of Pentacene Otftsmentioning

confidence: 99%

Improved Performance of Pentacene OTFTs With HfLaO Gate Dielectric by Using Fluorination and Nitridation

Deng¹,

Liu

Choi³

et al. 2012

IEEE Trans. Device Mater. Relib.

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Pentacene organic thin-film transistors (OTFTs) with fluorinated high-κ HfLaO as gate insulator were fabricated. The dielectrics were prepared by sputtering method and then annealed in N 2 or NH 3 at 400 • C. Subsequently, the dielectrics were treated by fluorine plasma for different durations (100, 300, and 900 s). The N 2 and NH 3 -annealed OTFTs with a 100-s plasma treatment achieve a carrier mobility of 0.62 and 0.66 cm 2 /V · s, respectively, which are higher than those of the OTFTs without plasma treatment (0.22 and 0.41 cm 2 /V · s). Moreover, the plasma-treated OTFTs realize better 1/f noise characteristics than those without plasma treatment. The improved performance is due to passivation of the dielectric surface by plasma-induced fluorine incorporation. However, for longer time (300 and 900 s) of plasma treatment, the performance of the OTFTs deteriorates in terms of carrier mobility and 1/f noise characteristics due to increased plasma-induced damage of the dielectric surface. The morphology of the pentacene film grown on the HfLaO gate insulator was characterized by SEM. It reveals that the pentacene film has larger grain size and smoother surface on the HfLaO dielectric (for both annealing gases) with 100-s plasma treatment than the others (0, 300, and 900 s). Finally, AFM characterization of the HfLaO film also confirms the damaging effect of excessive plasma treatment on the dielectric.

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Ink-jet printed p-type polymer electronics based on liquid-crystalline polymer semiconductors

Cited by 39 publications

References 25 publications

Inkjet‐Printing: A New Fabrication Technology for Organic Transistors

Inkjet‐Printing: A New Fabrication Technology for Organic Transistors

The influence of microstructure on charge separation dynamics in organic bulk heterojunction materials for solar cell applications

Improved Performance of Pentacene OTFTs With HfLaO Gate Dielectric by Using Fluorination and Nitridation

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