Initial stages of the autocatalytic oxidation of the InAs(001)-(4×2)/c(8×2) surface by molecular oxygen

Clemens, Jonathon B.; Bishop, Sarah R.; Feldwinn, Darby L.; Droopad, R.; Kummel, Andrew C.

doi:10.1016/j.susc.2009.04.036

Cited by 23 publications

(18 citation statements)

References 44 publications

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“…Tetramethyl alumina (TMA) in metal-first ALD is beneficial for this, as it inserts into the As-As dimers. 99 This factor is uses the small molecular size of TMA, as much as the valence of Al. 86,99 It can also rearrange the reconstructions on InGaAs surfaces, to remove dimers.…”

Section: E Makes Complex Reconstructions Involving Numerous Layersmentioning

confidence: 99%

Passivation of interfacial defects at III-V oxide interfaces

Lin

Robertson

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inDefect state passivation at III-V oxide interfaces for complementary metal-oxide-semiconductor devicesThe electronic structure of gap states has been calculated in order to assign the interface states observed at III-V oxide interfaces. It is found that As-As dimers and Ga and As dangling bonds can give rise to gap states. The difficulty of passivating interface gap states in III-V oxide interfaces is attributed to an auto-compensation process of defect creation which is activated when an electron counting rule is not satisfied. It is pointed out that oxide deposition needs to avoid burying As dimer states from the free surface, and to avoid sub-surface oxidation during growth or annealing, in order to avoid defect states at the interface or in the subsurface semiconductor.

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Section: E Makes Complex Reconstructions Involving Numerous Layersmentioning

confidence: 99%

Passivation of interfacial defects at III-V oxide interfaces

Lin

Robertson

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…[20][21][22][23] Conversely, the group III-rich reconstructions are less reactive to O 2 and, therefore, are probably quite suitable for oxide deposition. 24 In this paper, the bonding geometries along with electronic structures of In 2 O on InAs and In 0.53 Ga 0.47 As͑001͒-͑4 ϫ 2͒ are reported. STM is used to determine the exact interfacial bonding geometries of the In 2…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Shen

Chagarov

Feldwinn

et al. 2010

The Journal of Chemical Physics

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Interfacial bonding geometry and electronic structures of In(2)O on InAs and In(0.53)Ga(0.47)As(001)-(4×2) have been investigated by scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS). STM images show that the In(2)O forms an ordered monolayer on both InAs and InGaAs surfaces. In(2)O deposition on the InAs(001)-(4×2) surface does not displace any surface atoms during both room temperature deposition and postdeposition annealing. Oxygen atoms from In(2)O molecules bond with trough In/Ga atoms on the surface to form a new layer of O-In/Ga bonds, which restore many of the strained trough In/Ga atoms into more bulklike tetrahedral sp(3) bonding environments. STS reveals that for both p-type and n-type clean In(0.53)Ga(0.47)As(001)-(4×2) surfaces, the Fermi level resides near the valence band maximum (VBM); however, after In(2)O deposition and postdeposition annealings, the Fermi level position is close to the VBM for p-type samples and close to the conduction band minimum for n-type samples. This result indicates that In(2)O bonding eliminates surface states within the bandgap and forms an unpinned interface when bonding with In(0.53)Ga(0.47)As/InP(001)-(4×2). Density function theory is used to confirm the experimental finding.

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“…9,21 On InGaAs, TMA promotes surface re-arrangements to separate dimers and break up the supercell. 24 Further growth follows EC (Figs. 3(a)).…”

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confidence: 99%

Bonding principles of passivation mechanism at III-V-oxide interfaces

Robertson

Lin

2011

Appl. Phys. Lett.

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Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities Appl. Phys. Lett. 102, 022907 (2013); 10.1063/1.4776656 Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors J. Vac. Sci. Technol. B 31, 01A119 (2013); 10.1116/1.4774109 The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors J. Appl. Phys. 109, 023714 (2011); 10.1063/1.3537915 Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer

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Initial stages of the autocatalytic oxidation of the InAs(001)-(4×2)/c(8×2) surface by molecular oxygen

Cited by 23 publications

References 44 publications

Passivation of interfacial defects at III-V oxide interfaces

Passivation of interfacial defects at III-V oxide interfaces

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Bonding principles of passivation mechanism at III-V-oxide interfaces

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