Initial stages of epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CoSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>formation on Si(100) surfaces

Rangelov, G.; Augustin, P.; Stöber, J.; Fauster, Thomas

doi:10.1103/physrevb.49.7535

Cited by 52 publications

(18 citation statements)

References 27 publications

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“…As understood from the growth of Co on Si(100) at room temperature, diffused-in Co atoms occupying the tetrahedral interstitial sites are the main cause for the weakening of Si-Si bonds [9][10][11][12][13][14][15][16]. These weakened bonds allow Si atoms to diffuse out to the surface and form silicide-like phases.…”

Section: Introductionmentioning

confidence: 99%

Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Dash¹,

Goll²,

Carstanjen³

2008

Appl. Phys. A

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Highly resolved Co depth profiles have been obtained during the initial stages of Co growth on Si(100) at low temperature (−60 • C) by in situ high-resolution Rutherford backscattering spectrometry. We found extensive Co in-diffusion in the submonolayer growth regime even at this low temperature, besides Co on top of the Si surface. The amount of diffused-in Co is larger than the amount of Co at the Si surface. Every second Si layer is depleted of Co, starting at the Si surface, thus giving rise to compositional oscillations of Co in the Si(100) lattice. At this low temperature the growth of metallic Co on the Si surface is observed at 0.1 ML of deposited Co, which continues for higher coverages. At much higher coverage (5.93 ML of Co) almost exclusively low Co content silicides are formed at the Co/Si interface. The data presented here are compared with previous room temperature deposition data and are different in several aspects.PACS 68.55.ag; 82.80.Yc

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Section: Introductionmentioning

confidence: 99%

Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Dash¹,

Goll²,

Carstanjen³

2008

Appl. Phys. A

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show abstract

“…This eventually leads to the formation of metallic Co film on top, similar to the growth of Co on clean Si(1 1 1) surface as described above. These layers also appear to lack long range order and hence the LEED pattern of the clean surface is replaced by a diffuse background as Co coverage exceeds 2.5 ML [14].…”

Section: Introductionmentioning

confidence: 96%

Co growth on Si(001) and Si(111) surfaces: Interfacial interaction and growth dynamics

et al. 2006

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“…In this respect, the interface between Co and Si has been the focus of the research due to its lower resistivity, small lattice mismatch with silicon, sharp interface (ideal for making schottky barrier) and high temperature stability. Cobalt silicide is used mainly in electronic devices as a contact material [4][5][6]. However, the interaction of Co with Si is not fully understood and controversies exist about the nature of Co/Si system.…”

Section: Introductionmentioning

confidence: 99%