volume 91, issue 3, P379-383 2008
DOI: 10.1007/s00339-008-4439-9
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Abstract: ABSTRACT Highly resolved Co depth profiles have been obtained during the initial stages of Co growth on Si(100) at low temperature (−60 • C) by in situ high-resolution Rutherford backscattering spectrometry. We found extensive Co in-diffusion in the submonolayer growth regime even at this low temperature, besides Co on top of the Si surface. The amount of diffused-in Co is larger than the amount of Co at the Si surface. Every second Si layer is depleted of Co, starting at the Si surface, thus giving rise to c…

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