Initial results of the monolithically grown six-junction inverted metamorphic multi-junction solar cell

Patel, Pravin; Aiken, D.; Chumney, D.; Cornfeld, A.; Lin, Yong; Mackos, Chelsea; McCarty, J.; Miller, Nathaniel R.; Sharps, Paul; Stan, M. A.

doi:10.1109/pvsc-vol2.2012.6656717

Cited by 27 publications

(14 citation statements)

References 10 publications

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“…Although recent work suggests that growth using molecular beam epitaxy (MBE) can improve material quality [3], MBE growth suffers from high cost and low growth rates. The IMM cells incorporating lattice mismatched InGaAs have been pursued, but growth of mismatched InGaAs results in degraded cell quality, even with the use of thick grading layers [4].…”

Section: Introductionmentioning

confidence: 99%

Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

Chiu¹,

Law²,

Woo³

et al. 2014

IEEE J. Photovoltaics

109

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Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/ 0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a lowresistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun V o c between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

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Section: Introductionmentioning

confidence: 99%

Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

Chiu¹,

Law²,

Woo³

et al. 2014

IEEE J. Photovoltaics

109

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“…The multi-junction concept has the perspective of obtaining efficiencies above 45% and maybe even 50% under concentration. New designs for cells with more than 3 junctions require the use of thin-film cells in some form [27,59,60] either as a free standing thin-film cell or in combination with cells grown on different wafer materials through a layer transfer process. A basic method for obtaining a thin-film cell by etching/polishing of the wafer after growth is widely used [1,28,29], but this is an expensive method because the wafer, which has a large contribution in the total cell cost, is lost.…”

Section: Future Perspectivesmentioning

confidence: 99%

Thin-Film III–V Solar Cells Using Epitaxial Lift-Off

Bauhuis

Mulder

Schermer

2013

High-Efficiency Solar Cells

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Epitaxial lift-off is used to create thin-film III-V solar cells without sacrificing the GaAs wafer. It is based on selective etching of an AlAs release layer between the wafer and the cell structure using an HF solution. The wafer can be reused for subsequent deposition runs thereby reducing the cost of the cells. The thin-film cell can be transferred to any new carrier, e.g. glass, plastic, silicon or metal foil. Although epitaxial lift-off was first demonstrated in 1978, it took until the 1990s to make significant progress in understanding the process and devising new ways to increase the etch rate. The first single-junction epitaxial lift-off cells were made in 1996. Thin-film cells offer new cell applications based on their flexibility, low weight and possibility to deposit the cell structure in reverse order. Today the world record for single-junction cells is held by a thin-film GaAs cell, who's performance is partly based on the increased photonrecycling factor in cells with a backcontact acting as a mirror. Also state of the art tandem and inverted metamorphic thin-film cells have been demonstrated.

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“…Для широко используемых в настоящее время в космической и наземной солнечной энергетике трехпереходных СЭ [1], а также активно разрабаты-ваемых четырех-и шести-переходных элементов [2][3][4] создание эффективного просветляющего покрытия (ПП) c целью минимизации оптических потерь, определяемых отражением, является одним из важных этапов при решении задачи повышения кпд СЭ.…”

Section: Introductionunclassified

Влияние Двух- И Трехслойных Просветляющих Покрытий На Формирование Фототоков В Многопереходных Солнечных Элементах На Основе a-=sup=-Iii-=/Sup=-B-=sup=-v-=/Sup=-

Мусалинов¹,

Анзулевич²,

Bychkov³

et al. 2017

Физика И Техника Полупроводников

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Представлены результаты моделирования методом матриц переноса двухслойного, TiO2/SiO2, и трехслойного, TiO2/Si3N4/SiO2, просветляющих покрытий для многопереходных гетероструктурных солнечных элементов InGaP/GaAs/Ge. Экспериментально получено и оптимизировано двухслойное просветляющее покрытие TiO2/SiO2. С использованием экспериментальных спектральных зависимостей квантового выхода фотоответа солнечного элемента InGaP/GaAs/Ge и оптических характеристик просветляющих покрытий, полученных при моделировании, определены значения плотностей фототоков отдельных каскадов трехпереходного солнечного элемента для условий облучения AM1.5D (1000 Вт/м2), а также для случая отсутствия потерь на отражение. В рамках моделирования показано, что оптимизированное трехслойное просветляющее покрытие TiO2/Si3N4/SiO2 дает выигрыш в величине плотности фототока на 2.3 мА/см2 (AM1.5D) для Ge-субэлемента по сравнению с рассматриваемым вариантом двухслойного просветляющего покрытия TiO2/SiO2, обеспечивая тем самым рост коэффициента заполнения вольт-амперной характеристики и выходной электрической мощности многопереходного солнечного элемента. DOI: 10.21883/FTP.2017.01.8355

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Initial results of the monolithically grown six-junction inverted metamorphic multi-junction solar cell

Cited by 27 publications

References 10 publications

Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

Thin-Film III–V Solar Cells Using Epitaxial Lift-Off

Влияние Двух- И Трехслойных Просветляющих Покрытий На Формирование Фототоков В Многопереходных Солнечных Элементах На Основе a-=sup=-Iii-=/Sup=-B-=sup=-v-=/Sup=-

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