1997
DOI: 10.1016/s0169-4332(97)80061-x
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Initial oxidation of H-terminated Si(111) surfaces studied by HREELS

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Cited by 27 publications
(26 citation statements)
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“…pnc-Si is expected to grow a negatively charged native oxide as silicon surfaces typically do in the presence of oxygen (28). This expectation is consistent with the negative zeta potential of untreated pnc-Si and the fact that electroosmostic flow is directed toward the negative electrode.…”
Section: Significancesupporting
confidence: 66%
“…pnc-Si is expected to grow a negatively charged native oxide as silicon surfaces typically do in the presence of oxygen (28). This expectation is consistent with the negative zeta potential of untreated pnc-Si and the fact that electroosmostic flow is directed toward the negative electrode.…”
Section: Significancesupporting
confidence: 66%
“…The frequency of the loss peak due to the Si-O-Si mode is seen to shift up to~1050 cm − 1 at high coverage, likely due to coupling between adjacent molecules. Similar shifts to higher frequency upon increased coupling between Si-O-Si modes have been observed in the case of oxidation of H-terminated silicon surfaces [31].…”
Section: Resultssupporting
confidence: 74%
“…For H/Si(111) surfaces with oxygen inserted into most of the available Si-Si back bonds, characteristic Si-O-Si modes are observed at ∼410, ∼830, and 1095 cm -1 with the last of these being the most prominent. 36 The spectral changes observed for the photochemically reacted surface can therefore be explained by the incorporation of oxygen into the Si-Si back bonds. The apparent upshift of the 800 and 1070 cm -1 features can be accounted for by the growth of the Si-O-Si modes on the high-frequency side of both of these peaks.…”
Section: Resultsmentioning
confidence: 99%