Initial Oxidation of Clean and Metal-Deposited Si(100) Surfaces by Super-Pure Oxygen Gas

Abstract

ilfusashino-shi, mKyO 1g0 *NTT LSI laboratories, Atsugi-shi, KNAGAI{A 248_01 Initial oxidation processes of clean Si(100) surfaces oxidized by super-pure and normal grade oxygen gases are analyzed by synehrotron radiation photoemission spectroscopy to investigate the effect of He0 impurities. A significant difference in initial oxidation features such as oxidation rate and band bending relaxation is found for the two oxygen gases in the sputter-cleaned Si(100)2x1 surface and the Ag-deposited Si(100) surface. The higher oxidation rate and the larger band bending relaxation obtained with the normal grade oxygen can be attributed to molecular HzO impurities.

Temperature dependence of the electronic structure ofC60films adsorbed onSi(001)−Sakamoto1, Kondo2, Ushimi3 et al. 1999Phys. Rev. B518291View full textAdd to dashboardCite

“…A Si 2p component of a Si atom charged positively has a binding energy higher than that of the bulk one. 70,71 The Si 2p spectra measured after annealing the 1.0-ML C 60 films adsorbed on Si͑001͒ and Si͑111͒ surfaces at 670 K show undetermined positively charged surface components, S a7 and S b7 . No component within this energy range is observed in the spectrum of C 60 molecules adsorbed on a Si͑111͒ surface at 300 K in Fig.…”