Articles you may be interested inLow-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal-insulator transition J. Vac. Sci. Technol. A 30, 051502 (2012); 10.1116/1.4733995In situ measurement of surface stress evolution during sputter deposition of Co Cr X ∕ Cr ( X = Pt , Ta ) thin film and its magnetic properties J. Appl. Phys. 97, 10N116 (2005); 10.1063/1.1854253 Dynamic control of substrate bias for highly c -axis textured thin ferromagnetic CoCrTa film in inductively coupled plasma-assisted sputteringThe performance of inductively coupled plasma ͑ICP͒-assisted sputtering with an internal coil was revealed for deposition of ferromagnetic Co-based alloy films. Three types of internal coil, a directly grounded bare coil, a capacitively coupled bare coil and an insulated coil, were investigated with regard to the crystalline structure of films and plasma characteristics. Highly c-axis textured hexagonal-close-packed ͑hcp͒ film growth was achieved in the bare coil system at a medium operating Ar pressure of 1.3 Pa. Pole figure measurements showed that the film grown on a low-temperature Si substrate contained small face-centered-cubic phase in the c-axis textured hcp crystal. Plasma diagnostics suggested that high plasma space potential beyond 80 V caused highly textured growth through the effect of ion bombardment with proper energies for crystallization. The superior capability of ICP-assisted sputtering with a capacitively coupled bare coil was revealed for textured growth in the thin layer on a substrate surface. A high deposition rate was achieved as a result of high electron density of the order of 10 11 cm Ϫ3 in ICP-assisted sputtering with an insulated coil. However, the insulated coil system could not achieve textured growth.