Performance of inductively coupled plasma assisted sputtering with internal coil for ferromagnetic CoCrTa film deposition

Abstract

Articles you may be interested inLow-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal-insulator transition J. Vac. Sci. Technol. A 30, 051502 (2012); 10.1116/1.4733995In situ measurement of surface stress evolution during sputter deposition of Co Cr X ∕ Cr ( X = Pt , Ta ) thin film and its magnetic properties J. Appl. Phys. 97, 10N116 (2005); 10.1063/1.1854253 Dynamic control of substrate bias for highly c -axis textured thin ferromagnetic CoCrTa film in inductively coupled plasma-assisted sputteringThe performance of inductively coupled plasma ͑ICP͒-assisted sputtering with an internal coil was revealed for deposition of ferromagnetic Co-based alloy films. Three types of internal coil, a directly grounded bare coil, a capacitively coupled bare coil and an insulated coil, were investigated with regard to the crystalline structure of films and plasma characteristics. Highly c-axis textured hexagonal-close-packed ͑hcp͒ film growth was achieved in the bare coil system at a medium operating Ar pressure of 1.3 Pa. Pole figure measurements showed that the film grown on a low-temperature Si substrate contained small face-centered-cubic phase in the c-axis textured hcp crystal. Plasma diagnostics suggested that high plasma space potential beyond 80 V caused highly textured growth through the effect of ion bombardment with proper energies for crystallization. The superior capability of ICP-assisted sputtering with a capacitively coupled bare coil was revealed for textured growth in the thin layer on a substrate surface. A high deposition rate was achieved as a result of high electron density of the order of 10 11 cm Ϫ3 in ICP-assisted sputtering with an insulated coil. However, the insulated coil system could not achieve textured growth.

Effects of energetic substrate-incident ions on the growth of crystalline vanadium dioxide films in inductively coupled plasma-assisted sputtering

“…39,40) Previously, we clarified that in ICPS electrons move away from the metal coil in the positively biased period, resulting in high electron temperature and high space potential in order to sustain the plasma. 18,41) That is to say, large loss of electrons results in high-energy ions being incident to the substrate because of the acceleration between the substrate and the plasma. As listed in Table I, the plasma density of ICPS at the ICP rf power of 200 W is on the order of 10 10 cm ¹3 , which is not very high compared with that of CS, however, a high space potential (V s ) together with a high electron temperature (T e ) are characteristic of ICPS.…”

“…We reported low-temperature growth of a VO 2 film on CoCrTa alloy metal on a Si wafer by inductively coupled plasma (ICP)-assisted sputtering, in which a twoturn coil was inserted into the discharge space between the vanadium (V) target and the substrate. 18,19) In order to further develop the applicability of ICP-assisted sputtering for VO 2 growth on conductive layers under low temperature, characterization of the method from the standpoint of the effects of energetic ions incident to the substrate will be effective. Clarification of the dependence of ion energies on operating parameters enables us to achieve higher sputtering performance.…”

Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

“…The number of works focused on low temperature processes has drastically increased in the last decade. Among these works, some studies are devoted to the low temperature magnetron sputtering process [121][122][123][124] and to the film properties and their relationship with the discharge parameters during film deposition [121,125,126].…”

Effect of Annealing with Ar Plasma Irradiation for Transparent Conductive Nb-Doped TiO2Films on Glass Substrate

“…As will be shown later, the ICP source with an outer coil was able to produce a high-density plasma on the order of 10 11 cm À3 at an Ar pressure of 3.0 Pa with a low plasma potential of approximately 20 V, while the inner coil ICP produced a plasma with a medium density on the order of 10 10 cm À3 and a high plasma potential of over 80 V for the same Ar pressure. 17) We set a sample on a heater, which consisted of quartz plates wound with nichrome wire for ohmic heating. During annealing with Ar plasma, the sample was heated to a specified temperature in vacuum ( 5 Â 10 À4 Pa) and then the plasma was ignited.…”