We report a time-resolved photoluminescence study of negatively charged excitons (X À ) in remotely doped GaAs/AlGaAs quantum wells. We measure the effects of temperature, electron density and magnetic field on the X À formation process (X þ e À ! X À ), thereby demonstrating that it can be regarded as a classical exciton-electron scattering process. At low electron densities we find a linear dependence of the X þ e À ! X À formation rate on electron concentration and perpendicular magnetic field. At high electron densities, for which X À formation is very fast, the PL decay time is a direct measure of the X À intrinsic lifetime t X À . We demonstrate experimentally the dependence of t X À on the X À homogeneous linewidth.