Inheritance of zinc-blende structure from substrate in growth of GaN by MOCVD

Hashimoto, Tadao; Imafuji, Osamu; Ishida, M.; Terakoshi, Yoshitami; Sugino, Takashi; Yoshikawa, A.; Itoh, Kunio; Shirafuji, Junji

doi:10.1016/0022-0248(96)00477-0

Cited by 11 publications

(4 citation statements)

References 8 publications

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“…In conventional GaN growths on sapphire substrates, it was reported that three-dimensional islands with atomic facets of (1011) appeared at an initial growth stage, and then the orientation of (0002) became dominant in thicker GaN film due to the coalescence of neighboring islands. [15][16][17] As shown in Fig. 3, the (0002), (1010) peaks became dominant at a higher laser energy density.…”

Section: Resultsmentioning

confidence: 68%

Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN

Kim¹,

Park

Kim³

et al. 2003

Jpn. J. Appl. Phys.

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Polycrystalline gallium nitride (GaN) thin films of thickness 3.0 mm grown on silica glass substrates were annealed by a line beam of a KrF excimer laser under vacuum. The applied laser energy density was in the range of 300-600 mJ/cm 2 . Photoluminescence (PL) and X-ray diffraction (XRD) measurements have been carried out to investigate the laser annealing effects in polycrystalline GaN films grown on silica glass by metal-organic chemical vapor deposition (MOCVD). The results of the PL spectra revealed that the intensity of the band edge (BE) emission for the GaN on silica glass annealed at a laser energy density of 500 mJ/cm 2 was increased by as much as about 1.5 times in comparison with the as-grown GaN. It was found that the full width at half maximum (FWHM) of the XRD for laser annealed GaN film at a high laser energy density, 500 mJ/cm 2 , with 200 pulses was smaller than that of the as-grown GaN. These results indicate that the structural and optical properties of the poly-GaN layers grown on silica glass substrate are improved by the laser annealing method.

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Section: Resultsmentioning

confidence: 68%

Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN

Kim¹,

Park

Kim³

et al. 2003

Jpn. J. Appl. Phys.

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“…At 750°C, there was no cubic GaN (002) reflection; only the hexagonal GaN (0002) peaks were observed, as seen in Fig. 8,9 A cubic component as high as 91% was achieved when the GaN was deposited on the 1.5 µm SiC at 950°C. Hexagonal GaN with its c-axis perpendicular to the substrate preferentially grows at the low temperature of 750°C and is not affected by the 3C-SiC layer thickness.…”

Section: Resultsmentioning

confidence: 93%

“…8,9 In addition, the better thermal stability of 3C-SiC allows the growth of cubic GaN at higher temperatures, compared to GaAs where substrate decomposition prevents high temperature growth. However, a highquality cubic GaN layer has not been grown directly on Si due to the large difference in lattice mismatch (17%) and the thermal expansion coefficient between GaN and Si.…”

Section: Introductionmentioning

confidence: 99%

MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates

Wei

Xie

et al. 2000

Journal of Elec Materi

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“…The Matsushita/Osaka University group also reported on the growth of wurtzite and cubic GaN layers on the 3C-SiC/Si (001) substrates (Hashimoto, et al 1996) and on the growth of InGaN films on GaN (0001)/Al 2 O, (0001) substrates (Ishida, et al 1997b). The InGaN films were grown at lower temperatures (~ 700 -750 °C).…”

Section: Gan Electronic Device Research In Japanmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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Inheritance of zinc-blende structure from substrate in growth of GaN by MOCVD

Cited by 11 publications

References 8 publications

Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN

Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN

MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates

High-Temperature Electronics in Europe

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