InGaSb
           photodetectors using an InGaSb substrate for 2μm applications

Refaat, Tamer F.; Abedin, M. Nurul; Bhagwat, Vinay; Bhat, Ishwara B.; Dutta, P.S.; Singh, Upendra N.

doi:10.1063/1.1787893

Cited by 33 publications

(20 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…RESULTS Numerical calculations have been carried out for an In 0.10 Ga 0.90 Sb p-i-n APD for a temperature of 296K.The parameters from the calculation have been taken from [10], [4]. Fig.2 shows the variation of signal to noise ration with the gain of the device.…”

Section: Wherementioning

confidence: 99%

“…There are potential biomedical and security applications for devices operating at mid-infrared wavelengths. One particular antimony-containing easy-to-grow ternary is InGaSb which is increasingly used in mid-infrared photo-detectors [2], [4]- [6] and lasers [7], [8]. Antimony-based materials are also interesting for their asymmetric electron and hole ionization coefficients due to their band structure properties.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Theoretical analysis of noise performance of an In<inf>0.10</inf>Ga <inf>0.90</inf>Sb avalanche photodiode

Hussain

Rouf

2009

2009 First Asian Himalayas International Conference on Internet

View full text Add to dashboard Cite

Antimony based materials have the advantage of having the capability of detecting the mid-infrared wavelength (2 to 5μm) because of its interesting optoelectronic properties. In this paper we have theoretically studied the noise performance of an In 0.10 Ga 0.90 Sb Avalanche Photodiode to examine its suitability as a detector in optical receiver units. We show that at optimum gain such a device has a low value of excess noise factor and a moderate signal to noise ratio. For a digital system the device exhibits a very low value of bit error rate which makes it suitable for using as a photo-detector in mid-infrared region.

show abstract

Section: Wherementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of noise performance of an In<inf>0.10</inf>Ga <inf>0.90</inf>Sb avalanche photodiode

Hussain

Rouf

2009

2009 First Asian Himalayas International Conference on Internet

View full text Add to dashboard Cite

show abstract

“…On the other hand, InGaSb ternary material indicated good performance for 2 µm detectors 21 , but still they are on the research level not being commercially available. The availability of ternary InGaSb virtual substrates has a promising potential for developing high performance detectors at wavelengths around the 2 µm, without the influence of the binary substrates usually used for processing the ternary materials 22 .…”

Section: Iii-v Compound Detectorsmentioning

confidence: 99%

“…The InGaSb/GaSb detectors consist of p-type and n-type epitaxial layers of InGaSb, grown on an n-type binary GaSb substrate 21 . For InGaSb/InGaSb detectors, tellurium doped n-type ternary InGaSb substrates were grown by the vertical Bridgman technique and the p-n devices were fabricated using Zn-diffusion 22 . Also commercial InGaAs pin detectors, obtained from Hamamatsu, were used for the comparison.…”

Section: Ingaassb/algaassb Phototransistorsmentioning

confidence: 99%

III-V compound detectors for CO 2 DIAL measurements

et al. 2005

Self Cite

View full text Add to dashboard Cite

Profiling of atmospheric carbon dioxide (CO 2 ) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 µm wavelength, for investigating atmospheric CO 2 . This drives the need for high quality detectors at this wavelength. Although 2 µm detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application.In this paper the detector requirements for a long range CO 2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-µm detectivity as high as 3.

show abstract

“…On the other hand, InGaSb ternary material indicated good performance for 2 µm detectors 8 , but still they are on the research level not being commercially available. The availability of ternary InGaSb virtual substrates has a promising potential for developing high performance detectors at wavelengths around the 2 µm, without the influence of the binary substrates usually used for processing the ternary materials 9 .…”

Section: Introductionmentioning

confidence: 99%

InGaAsSb/AlGaAsSb heterojunction phototransistors for infrared applications

et al. 2006

Self Cite

View full text Add to dashboard Cite

High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance.In this paper, the performance of a novel npn InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10 9 cmHz 1/2 /W at 2-µm was obtained at 100 o C temperature and 2 V bias voltage. This corresponds to a responsivity of 94.7 A/W and an internal gain of 156 with about 37.7% quantum efficiency. Reducing the temperature to -30 o C allows to increase the bias to 3V and enhance the detectivity to 8.7x10 10 cmHz 1/2 /W at the same wavelength, which corresponds to a responsivity of 386.5 A/W and an internal gain of 288.2 with about 83.3% quantum efficiency. The device impulse response and linearity, including the corresponding dynamic range, also are presented. Impulse response analysis indicated a settling time of about 1.1 µs at 2V and 100 o C, while linearity measurements indicated a constant responsivity in the radiation intensity range of 1.6x10 -7 W/cm 2 and 31.6 mW/cm 2 .

show abstract

InGaSb photodetectors using an InGaSb substrate for 2μm applications

Cited by 33 publications

References 11 publications

Theoretical analysis of noise performance of an In<inf>0.10</inf>Ga <inf>0.90</inf>Sb avalanche photodiode

Theoretical analysis of noise performance of an In<inf>0.10</inf>Ga <inf>0.90</inf>Sb avalanche photodiode

III-V compound detectors for CO 2 DIAL measurements

InGaAsSb/AlGaAsSb heterojunction phototransistors for infrared applications

Contact Info

Product

Resources

About