Antimony based materials have the advantage of having the capability of detecting the mid-infrared wavelength (2 to 5μm) because of its interesting optoelectronic properties. In this paper we have theoretically studied the noise performance of an In 0.10 Ga 0.90 Sb Avalanche Photodiode to examine its suitability as a detector in optical receiver units. We show that at optimum gain such a device has a low value of excess noise factor and a moderate signal to noise ratio. For a digital system the device exhibits a very low value of bit error rate which makes it suitable for using as a photo-detector in mid-infrared region.
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