InGaSb Defect Filter Layer to Improve Performance of GaSb Solar Cells Grown on GaAs Substrates

Mansoori, A.; Addamane, Sadhvikas; Renteria, Emma J.; Shima, Darryl M.; Balakrishnan, Ganesh

doi:10.1007/s11664-020-08490-3

Cited by 3 publications

(1 citation statement)

References 26 publications

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“…These misfit dislocations relieve >99% of the strain right at that heterointerface, and as a result the threading dislocation density (TDD) remains low. A low TDD means that one can grow functional devices from lasers to thermophotovoltaic cells above an IMF interface. − …”

Section: Introductionmentioning

confidence: 99%

Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

Nordstrom,

Garrett,

Reddy

et al. 2023

Crystal Growth & Design

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We demonstrate that when highly lattice-mismatched GaSb layers are grown on GaAs(111)A substrates, the strain can be relieved by a self-assembled array of interfacial misfit (IMF) dislocations. This 2D array consists of periodically spaced, pure 60°dislocations that lie in the plane of the GaSb/GaAs(111)A interface. The efficient strain relief provided by the IMF means that the GaSb exhibits good material quality, with threading dislocation densities in the 2−3 × 10 8 cm −2 range. Other through-film defects associated with twinned GaSb(111) regions have densities between 0.2 and 2 × 10 8 cm −2 . The ability to grow GaSb on GaAs substrates with a (111) orientation creates research opportunities for the integration of dissimilar materials.

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Section: Introductionmentioning

confidence: 99%

Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

Nordstrom,

Garrett,

Reddy

et al. 2023

Crystal Growth & Design

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First-principles WC-GGA and mBJ calculations for structural, electronic, optical and elastic properties of MxGa1-xSb (M=Al, In, B) ternary alloys

Sharma

Chandra²,

Rathi³

et al. 2022

Materials Science in Semiconductor Processing

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A transmission electron microscopy study of dislocation propagation and filtering in highly mismatched GaSb/GaAs heteroepitaxy

Addamane

Shima

Mansoori

et al. 2020

Journal of Applied Physics

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Monolithic integration of lattice-mismatched semiconductor materials opens up access to a wide range of bandgaps and new device functionalities. However, it is inevitably accompanied by defect formation. A thorough analysis of how these defects propagate and interact with interfaces is critical to understanding their effects on device parameters. Here, we present a comprehensive study of dislocation networks in the GaSb/GaAs heteroepitaxial system using transmission electron microscopy (TEM). Specifically, the sample analyzed is a GaSb film grown on GaAs using dislocation–reduction strategies such as interfacial misfit array formation and introduction of a dislocation filtering layer. Using various TEM techniques, it is shown that such an analysis can reveal important information on the dislocation behavior including filtering mechanism, types of dislocation reactions, and other interactions with interfaces. A novel method that enables plan-view imaging of deeply embedded interfaces using TEM and a demonstration of independent imaging of different dislocation types are also presented. While clearly effective in characterizing dislocation behavior in GaSb/GaAs, we believe that the methods outlined in this article can be extended to study other heteroepitaxial material systems.

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InGaSb Defect Filter Layer to Improve Performance of GaSb Solar Cells Grown on GaAs Substrates

Cited by 3 publications

References 26 publications

Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

First-principles WC-GGA and mBJ calculations for structural, electronic, optical and elastic properties of MxGa1-xSb (M=Al, In, B) ternary alloys

A transmission electron microscopy study of dislocation propagation and filtering in highly mismatched GaSb/GaAs heteroepitaxy

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