InGaP PHEMTs for 3.5GHz W-CDMA applications

Lan, E.; Johnson, E. M.; Knappenberger, B.; Miller, M.

doi:10.1109/mwsym.2002.1011814

Cited by 13 publications

(4 citation statements)

References 10 publications

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“…For its feature development, the current driving capability, output gain and high operation frequencies of active device are strongly required. Hence, the structure design of double heterojunction HEMTs (DH-HEMTs) where another more electron supply layer is employed on bottom side of the channel is proposed to overcome it [6][7][8][9]. Accompanying with the promotion of current density, the threshold-voltage (V TH ) controllability of FET-related devices becomes more critical to handle its application such as active-region operation and the enhancement-depletion control mode in integrated circuit application.…”

Section: Introductionmentioning

confidence: 99%

“…Accompanying with the promotion of current density, the threshold-voltage (V TH ) controllability of FET-related devices becomes more critical to handle its application such as active-region operation and the enhancement-depletion control mode in integrated circuit application. Generally, gate-metal sinking and gate-recess controlling are the most popular approaches to dominate device V TH [7][8][9]. For gate-recess process of GaAs-based HEMTs, the employee of In 0.49 Ga 0.51 P material instead of Al x Ga 1-x As in device structure has been reported to provide a higher etching selectivity than Al x Ga 1-x As/In x Ga 1-x As material series.…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers

Lin¹,

Zeng

Wei

et al. 2011

AMR

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Al0.22Ga0.78As/In0.18Ga0.82As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) with gate structures of traditional planar gate (PG), one-stage gamma-gate (1SΓG) and two-stage gamma-gate (2SΓG) formed by using the Al0.22Ga0.78As/In0.49Ga0.51P etch-stop layers (ESL) are simulated and presented in this work. Based on this proposed ESL structure design, the fabrication and implementation of studied DH-HEMT device with 1SΓG and 2SΓG could be expected. Both ΓG-structure devices show the better electric field property compared to PG-device. Simulated results reveal that there are no significant differences in common-source voltage-current characteristics among all studied devices. The obtained drain current density and transconductance of all studied devices are about 220 mAmm-1and 265 mSmm-1. However, the current stability of ΓG-devices with larger bias operation would be improved due to its edge-effect of ΓG extended-region. In addition, the electric field intensity under the gate-footprint is effectively reduced by both studied ΓG structures. The electric field peak value of PG-device is 498 kV cm-1, and it would be reduced down to about 210 kVcm-1and 178 kVcm-1for 1SΓG- and 2SΓG-device, respectively. On the other hand, some frequency property dropping is observed from studied device with 1SΓG or 2SΓG due to the side-edge extension of ΓG-device would create the additional parasitic capacitance. The obtained cut-off frequencies are 15 GHz, 10.5 GHz and 10 GHz for PG-, 1SΓG- and 2SΓG-device (at VGS=+5 V and VGS=-0.75 V), respectively.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers

Lin¹,

Zeng

Wei

et al. 2011

AMR

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“…A start-of-the-art power amplifier design has to meet the system requirements for high gain, high efficiency, and meet the desired output power while the device and process technology of choice plays a crucial role in realizing a working system. GaAs-based devices have been found to be more suitable for high power applications with higher efficiency and better linearity than those of Si devices [2,12]. In addition, the GaAs technology has lower R&D costs than CMOS R&D; this is another factor that lures companies to use the technology in power amplifier design [13].…”

Section: Introductionmentioning

confidence: 99%

2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications

Rasmi

Rose

Rahim

et al. 2010

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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This paper describes the design and measurement of a medium power amplifier (MPA) using 0.15µ µ µ µm GaAs PHEMT technology for wireless application. At 2.4 GHz and 3.0 V of V DS , a fabricated MPA exhibits a P1dB of 15.20 dBm, PAE of 12.70% and gain of 9.70 dB. The maximum current, Imax is 84.40mA and the power consumption for this device is 253.20mW. The die size of this amplifier is 1.2mm x 0.7mm.

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“…GaAs-based devices, such as pseudomorphic high electronic mobility transistor (PHEMT) and heterojunction bipolar transistor (HBT), have been found to be more suitable for high power applications with higher efficiency and better linearity than those of Si-based devices [1], [2]. Previously, an InGaP HBT fully integrated PA module, operating at only a 5-V drain Manuscript voltage, with 44% PAE and 27.5 dBm of 1-dB gain compression output power, has been demonstrated [3].…”

Section: Introductionmentioning

confidence: 99%

A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications

Chu

Huang

Liu

et al. 2005

IEEE Microw. Wireless Compon. Lett.

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A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8 GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 50 input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4 dB small-signal gain and 34 dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24 dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5 GHz is also achieved. Index Terms-Monolithic microwave integrated circuit (MMIC), pseudomorphic high electronic mobility transistor (PHEMT), power amplifier (PA), wideband code division multiple access (W-CDMA).

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InGaP PHEMTs for 3.5GHz W-CDMA applications

Cited by 13 publications

References 10 publications

Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers

Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers

2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications

A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications

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