InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source

Shang, Xunzhong; Niu, Pingjuan; Mao, Baoguang; Wang, W.X.; Guo, Liping; Huang, Qi; Zhou, Jianping

doi:10.1016/j.ssc.2006.02.025

Cited by 2 publications

(1 citation statement)

References 19 publications

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“…It has a bandgap as well as lattice constants intermediate between those of the constituents, binary alloys InP and GaP, while the exact characteristics depend upon the elemental composition . This material is used in high-power and high-frequency electronics, as well as in high performance field effect and bipolar transistors. − It is also a viable material for developing optoelectronics and useful for fabrication of high efficiency solar cells, semiconductor lasers, and LEDs. , …”

Section: Introductionmentioning

confidence: 99%

Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP₂(001) Surfaces

Gamoke

Raghavachari

2013

J. Phys. Chem. C

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Atomic ordering in vapor-phase epitaxially grown ternary III−V compound semiconductor alloys is a topic of active interest. In this paper, the mechanistic steps involved in the growth of the group III sublattice over the P-rich InGaP 2 (001) surface resulting in the generation of CuPt B ordering are explored using appropriate cluster models and density functional theory. The thermodynamics and kinetics of the individual reaction steps have been calculated for both ordered and disordered growth mechanisms. The ordering is a kinetically preferred surface phenomenon and occurs under 2 × 1 surface reconstruction. The thermodynamic and kinetic factors governing the ordered growth are discussed.

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Section: Introductionmentioning

confidence: 99%

Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP₂(001) Surfaces

Gamoke

Raghavachari

2013

J. Phys. Chem. C

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Surface Photovoltage Characterization of In_0.49Ga_0.51P/GaAs Heterostructures

김정화¹,

insoo-kim²,

Bae³

2010

Journal of the Korean Vacuum Society

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We report the surface photovoltage (SPV) properties of In 0.49 Ga 0.51 P/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and In 0.49 Ga 0.51 P transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.

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InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source

Cited by 2 publications

References 19 publications

Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP₂(001) Surfaces

Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP₂(001) Surfaces

Surface Photovoltage Characterization of In_0.49Ga_0.51P/GaAs Heterostructures

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InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source

Cited by 2 publications

References 19 publications

Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP2(001) Surfaces

Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP2(001) Surfaces

Surface Photovoltage Characterization of In0.49Ga0.51P/GaAs Heterostructures

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Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP₂(001) Surfaces

Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP₂(001) Surfaces

Surface Photovoltage Characterization of In_0.49Ga_0.51P/GaAs Heterostructures