InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting

Liu, Shu Yen; Sheu, Jinn-Kong; Lin, Yu Chuan; Chen, Yu Tong; Tu, Shang Ju; Lee, M. L.; Lai, Wei–Chi

doi:10.1364/oe.21.00a991

Cited by 13 publications

(6 citation statements)

References 17 publications

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“…[15][16][17] Therefore, the use of InGaN as a photoelectrode material has recently generated considerable interest. [23][24][25][26][27][28] While a number of previous studies have shown PEC effects in InGaN and GaN, H 2 gas generation was demonstrated either via the assistance of external bias or under the irradiation by UV light. 10,[18][19][20][23][24][25][26] More recently, water splitting under selective bands of visible light using multiband InGaN/GaN nanowire heterostructures has been demonstrated.…”

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confidence: 99%

“…More recently, solar water splitting was demonstrated by a hybrid system consisting of n-type InGaN working electrodes with bias supplied by a GaAs solar cell. 28 Here, we report on the realization of a monolithic integrated solar-PEC cell device based on the InGaN material system which is capable to directly generate H 2 gas via solar water splitting without external bias with the sunlight being the only energy input. The layer structure of the InGaN/GaN multiple quantum wells (MQWs) solar cell employed in this study is illustrated in Fig.…”

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confidence: 99%

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Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

Dahal¹,

Pantha²,

Li³

et al. 2014

Applied Physics Letters

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InGaN alloys are very promising for solar water splitting because they have direct bandgaps that cover almost the whole solar spectrum. The demonstration of direct solar-to-fuel conversion without external bias with the sunlight being the only energy input would pave the way for realizing photoelectrochemical (PEC) production of hydrogen by using InGaN. A monolithic solar-PEC cell based on InGaN/GaN multiple quantum wells capable to directly generate hydrogen gas under zero bias via solar water splitting is reported. Under the irradiation by a simulated sunlight (1-sun with 100 mW/cm2), a 1.5% solar-to-fuel conversion efficiency has been achieved under zero bias, setting a fresh benchmark of employing III-nitrides for artificial photosynthesis. Time dependent hydrogen gas production photocurrent measured over a prolonged period (measured for 7 days) revealed an excellent chemical stability of InGaN in aqueous solution of hydrobromic acid. The results provide insights into the architecture design of using InGaN for artificial photosynthesis to provide usable clean fuel (hydrogen gas) with the sunlight being the only energy input.

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confidence: 99%

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confidence: 99%

Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

Dahal¹,

Pantha²,

Li³

et al. 2014

Applied Physics Letters

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“…[163] Nowadays, GaAs and Si solar cell have been integrated with InGaN nano-photoelectrodes for efficient solar energy conversion with the sunlight being the only energy input. [164][165][166] Among these configurations, integrated InGaN NWs photoelectrode/Si solar cell is the most widely studied due to the skilled growth process and potential practical application of InGaN NWs/Si, as schematically shown in Figure 10b. For example, Fan et al has fabricated a PEC/PV tandem photoanode, in which the top PEC cell of n-type InGaN NWs were monolithically integrated on bottom solar cell of n-type Si via the linking of a p++/n++ Si tunnel junction.…”

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confidence: 99%

Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

Lin

Wang

2020

Adv Funct Materials

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Photoelectrochemical (PEC) water splitting provides a promising approach to convert solar energy into hydrogen. Developing active, stable, and cost-effective semiconductors photoelectrodes is of great significance for achieving high-efficiency and large-scale hydrogen production. InGaN nanowires as an important candidate have gained a great upsurge in solar water splitting due to its tunable gap, high electron mobility, large active area, and excellent chemical stability. To obtain state-of-the-art InGaN nanowires-based photoelectrodes, tremendous efforts have been devoted to enhance light absorption capacity, charge carrier dynamics, and redox activity. In this review, recent advances in InGaN nanowires as photoelectrodes for PEC water splitting are comprehensively presented, with a focus on photoelectrode optimization strategies from the aspects of surface and interface structure modulation including doping engineering, energy band engineering, heterostructure engineering, and micro-nano engineering. The representative applications of InGaN nanowires-based PEC tandem cell are also discussed. Finally, perspectives on remaining challenges and future development are outlined.

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“…Previous studies have extensively investigated the characteristics of GaN-based photoelectrodes. , GaN-based photoelectrodes exhibit robust material properties, good compatibility with solar cells, and an appropriate bandgap position that spans the oxygen and hydrogen evolution potentials in PEC water splitting. Furthermore, they benefit from well-established semiconductor manufacturing techniques. , The bandgap of GaN-based photoelectrodes can be adjusted by incorporating indium (In) to form In x Ga 1– x N, which enables a broad absorption spectrum ranging from ultraviolet (UV) to visible light. , In x Ga 1– x N-based photoelectrodes have been extensively researched due to their suitable band position that aligns with the oxidation and reduction potentials of water and their tunable bandgap. − However, In x Ga 1– x N-based samples suffer from severe photocorrosion caused by poor material quality. , This issue arises due to the significant lattice mismatch between GaN and the In x Ga 1– x N epitaxy layer during epitaxial growth, leading to structural defects such as threading dislocations. These threading dislocations can extend from the GaN/In x Ga 1– x N interface to the surface of the In x Ga 1– x N films, resulting in numerous surface pits that hinder the performance of the In x Ga 1– x N-based photoelectrodes.…”

Section: Introductionmentioning

confidence: 99%

Seed-Assisted Synthesis of Ni(OH)₂ Nanosheets on InGaN Films as Photoelectrodes toward Solar-Driven Water Splitting

Yao,

Huang,

Chuang

et al. 2023

ACS Appl. Energy Mater.

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In this study, we conducted photoelectrochemical (PEC) water-splitting reactions using indium gallium nitride (InGaN) as photoelectrodes to extend light absorption from ultraviolet to visible wavelengths. However, the bare InGaN films experience significant photocorrosion due to numerous defects resulting from the substantial lattice mismatches between GaN and InGaN. While Ni(OH)2 nanosheets, prepared through a hydrothermal method and decorated on the InGaN photoelectrodes, show promise in mitigating photocorrosion, incomplete coverage of Ni(OH)2 on the InGaN photoelectrodes leads to corrosion in the uncovered areas. To enhance the coverage of Ni(OH)2 nanosheets on InGaN-based photoelectrodes, we synthesized Ni(OH)2 nanosheets using a NiO nanofilm as the seed layer. Experimental results demonstrate that photoelectrodes made of the Ni(OH)2/NiO/InGaN composite films exhibit superior PEC performance compared to that of NiO-free InGaN photoelectrodes. Additionally, after stability tests, no significant photocorrosion was observed on the Ni(OH)2-coated InGaN surface with the NiO seed layer while achieving higher photocurrents and increased hydrogen production rates. The Ni(OH)2/NiO/InGaN photoelectrodes exhibit approximately 30% enhancement in photocurrents compared to the bare InGaN films.

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InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting

Cited by 13 publications

References 17 publications

Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

Seed-Assisted Synthesis of Ni(OH)₂ Nanosheets on InGaN Films as Photoelectrodes toward Solar-Driven Water Splitting

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InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting

Cited by 13 publications

References 17 publications

Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

Seed-Assisted Synthesis of Ni(OH)2 Nanosheets on InGaN Films as Photoelectrodes toward Solar-Driven Water Splitting

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Seed-Assisted Synthesis of Ni(OH)₂ Nanosheets on InGaN Films as Photoelectrodes toward Solar-Driven Water Splitting