InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

Hooper, S. E.; Kauer, Matthias; Bousquet, V.; Johnson, Klein; Barnes, J.; Heffernan, J.

doi:10.1049/el:20040015

Cited by 45 publications

(27 citation statements)

References 7 publications

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“…Initial devices operated at room temperature under pulsed current injection [3]. Threshold current densities of 30 kA cm -2 and operating voltages of 33 V were similar to the first LDs reported by Nakamura et al by MOCVD [4].…”

Section: Introductionsupporting

confidence: 77%

“…In 2004, the authors reported the first nitride laser diodes (LDs) grown by molecular beam epitaxy (MBE), thereby opening up the field to alternative growth methods [3]. Significant advantages may be obtained by the use of MBE for nitrides growth including reduced consumption of source materials, scope for improved control of growth parameters, and the possibility of new material properties associated with the MBE growth mechanism.…”

Section: Introductionmentioning

confidence: 99%

“…The laser diodes were grown in an Oxford Instruments V80 MBE system using Ammonia (NH 3 ) as the source of nitrogen [3]. The group III elements as well as the n-type dopant were evaporated from gallium, aluminum, indium and silicon solid source effusion cells.…”

Section: Introductionmentioning

confidence: 99%

“…Typical growth temperatures were 1000 °C for the GaN and AlGaN layers and 660 °C for the InGaN quantum wells. No post-growth thermal annealing to activate the p-type dopant was necessary [3]. After growth, the wafers www.pss-c.com…”

Section: Introductionmentioning

confidence: 99%

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Molecular beam epitaxy for high‐efficiency nitride optoelectronics

Heffernan

Kauer

Windle

et al. 2006

Phys. Status Solidi (c)

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We review the significant progress made in the development of nitride laser diodes by molecular beam epitaxy (MBE). We report on our recent result of room temperature continuous-wave operation of InGaN quantum well laser diodes grown by MBE. Ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave threshold current of 125 mA, corresponding to a threshold current density of 5.7 kA cm -2. The lasers have a threshold voltage of 8.6 V and a lifetime of several minutes. We outline the further technical challenges associated with demonstrating lifetimes of several thousand hours and present an assessment of the potential of MBE as a growth method for commercial quality nitride optoelectronic devices.

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Section: Introductionsupporting

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Molecular beam epitaxy for high‐efficiency nitride optoelectronics

Heffernan

Kauer

Windle

et al. 2006

Phys. Status Solidi (c)

Self Cite

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“…In spite of MBE's many potential advantages, such as much better qual-ity of interfaces, sharper doping profiles and superior in situ growth monitoring capabilities [3][4][5], the considerably inferior optical quality of grown layers, when compared to similar structures grown by MOVPE, fueled widespread belief that this technique would never become a viable alternative in the field of GaN based optoelectronics. Only very recently the room temperature, pulsed operation of MBE-grown laser diodes (LDs) with 400 nm emission wavelength was demonstrated [6]. These devices were grown with so-called ammonia MBE [3], where atomic beams are used for group III elements, while NH 3 is used as the nitrogen precursor.…”

Section: Introductionmentioning

confidence: 99%

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

Skierbiszewski

2005

Acta Phys. Pol. A

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The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE is presented. This technology is ammonia free and nitrogen for growth is activated in RF plasma source from nitrogen molecules. The new growth mechanism -adlayer enhanced lateral diffusion of adatoms on semiconductor surface is studied in plasma assisted MBE. This mechanism enables us to achieve high quality step-flow epitaxy at temperatures 600−750• C, much lower than expected from classical estimates based on the melting point of GaN. We show that growth at low temperatures in metal rich (gallium or indium) regime, together with use of low dislocation bulk GaN substrates, results in high quality of (In, Al, Ga)N layers and sharp interfaces. We demonstrate record high mobility of two-dimensional electron gas at GaN/AlGaN interface (with mobility exceeding 100 000 cm 2 /(V s) at 4.2 K and 2500 cm 2 /(V s) at 300 K) and report on first blue-violet InGaN multiquantum well laser diodes, operating in 407-422 nm wavelengths range. In this paper, we discuss also properties of strain compensated InAlN/InGaN multiquantum wells grown by plasma assisted MBE which are very attractive for telecommunication applications at 1.5 µm wavelengths like electro-optical modulators or all-optical switches.

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